Datasheet MIC5021 (Microchip) - 4
| Hersteller | Microchip |
| Beschreibung | High-Speed, High-Side MOSFET Driver with Charge Pump and Overcurrent Limit |
| Seiten / Seite | 24 / 4 — MIC5021. DC CHARACTERISTICS (CONTINUED) |
| Revision | 12-09-2016 |
| Dateiformat / Größe | PDF / 1.5 Mb |
| Dokumentensprache | Englisch |
MIC5021. DC CHARACTERISTICS (CONTINUED)
Modelllinie für dieses Datenblatt
Textversion des Dokuments
MIC5021
DC CHARACTERISTICS (CONTINUED)
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, GND = 0V, VDD = 12V, CT = OPEN,
Gate CL = 1500 pF (IRF540 MOSFET).
Parameters
Gate Fall Time
Max. Operating Frequency
Note 1:
2:
3:
4:
5:
6:
7:
8: Sym. Min. Typ. Max. Units Conditions tF — 400 500 ns Note 6 fMAX 100 150 — kHz Note 7 When using sense MOSFETs, it is recommended that RSENSE < 50Ω. Higher values may affect the sense
MOSFET’s current transfer ratio.
DC measurement.
Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for gate transition from 0V to 2V.
Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for gate transition from 2V to 17V.
Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for gate transition from 20V (gate on voltage)
to 17V.
Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for gate transition from 17V to 2V.
Frequency where gate on voltage reduces to 17V with 50% input duty cycle.
Gate on time tG(ON) and tG(OFF) are not 100% production tested. DS20005677A-page 4 2016 Microchip Technology Inc.
DC CHARACTERISTICS (CONTINUED)
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, GND = 0V, VDD = 12V, CT = OPEN,
Gate CL = 1500 pF (IRF540 MOSFET).
Parameters
Gate Fall Time
Max. Operating Frequency
Note 1:
2:
3:
4:
5:
6:
7:
8: Sym. Min. Typ. Max. Units Conditions tF — 400 500 ns Note 6 fMAX 100 150 — kHz Note 7 When using sense MOSFETs, it is recommended that RSENSE < 50Ω. Higher values may affect the sense
MOSFET’s current transfer ratio.
DC measurement.
Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for gate transition from 0V to 2V.
Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for gate transition from 2V to 17V.
Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for gate transition from 20V (gate on voltage)
to 17V.
Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for gate transition from 17V to 2V.
Frequency where gate on voltage reduces to 17V with 50% input duty cycle.
Gate on time tG(ON) and tG(OFF) are not 100% production tested. DS20005677A-page 4 2016 Microchip Technology Inc.