Datasheet IRF520, SiHF520 (Vishay) - 6

IRF520, SiHF520
Vishay Siliconix L VDS VDS Vary t t p to obtain p required IAS VDD R D.U.T G + V - DD V I A DS AS 10 V t 0.01 p Ω IAS
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
600 ID Top 3.8 A 500 6.5 A Bottom 9.2 A 400 300 200 , Single Pulse Energy (mJ) 100 ASE V = 25 V DD 0 25 50 75 100 125 150 175 91017_12c Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator Same type as D.U.T. Q 50 kΩ G 10 V 12 V 0.2 µF 0.3 µF Q Q GS GD + V D.U.T. DS - VG VGS 3 mA Charge I I G D Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
www.vishay.com Document Number: 91017 6 S11-0511-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000