Datasheet LT8415 (Analog Devices) - 3
| Hersteller | Analog Devices |
| Beschreibung | Ultralow Power Boost Converter with Dual Half-Bridge Switches |
| Seiten / Seite | 14 / 3 — ELECTRICAL CHARACTERISTICS. The. denotes the specifications which apply … |
| Dateiformat / Größe | PDF / 268 Kb |
| Dokumentensprache | Englisch |
ELECTRICAL CHARACTERISTICS. The. denotes the specifications which apply over the full operating
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LT8415
ELECTRICAL CHARACTERISTICS The
l
denotes the specifications which apply over the full operating temperature range, otherwise specifications are TA = 25°C. VIN = 3.0V, VSHDN = VIN unless otherwise noted. (Note 2) PARAMETER CONDITIONS MIN TYP MAX UNITS
PMOS Disconnect Current Limit 14 19 25 mA PMOS Disconnect VCAP - VOUT IOUT = 1mA 50 mV Internal Resistor Divider Ratio l 31.6 31.85 32.2 FBP pin Bias Current VFBP = 0.5V, Current Flows Out of Pin l 1.3 30 nA SHDN Minimum Input Voltage High SHDN Rising l 1.20 1.30 1.45 V SHDN Input Voltage High hysteresis 60 mV SHDN Hysteresis Current (Note 3) 0.08 0.1 0.14 µA SHDN Input Voltage Low 0.3 V SHDN Pin Bias Current VSHDN = 3V 0 1 µA VSHDN = 16V 2 3 µA IN1,IN2 Minimum Input Voltage High l 1.1 V IN1,IN2 Input Voltage Low l 0.3 V OUT1,OUT2 Rise Time VOUT = 34V, CLOAD = 200pF (Note 5) 2.5 µs OUT1,OUT2 Fall Time VOUT = 34V, CLOAD = 200pF (Note 5) 3 µs OUT1,OUT2 Rise Delay VOUT = 34V, CLOAD = 200pF (Note 5) 4 µs OUT1,OUT2 Fall Delay VOUT = 34V, CLOAD = 200pF (Note 5) 2 µs Half-bridge PMOS Voltage Drop VOUT – VOUT1,OUT2 IN1,IN2 = 2V, 0.1mA Load From OUT1,OUT2 70 mV Half-bridge NMOS Voltage Drop VOUT1,OUT2 IN1,IN2 = 0V, 0.1mA Current Into OUT1,OUT2 85 mV
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings LT8415I is guaranteed over the full –40°C to 125°C operating junction may cause permanent damage to the device. Exposure to any Absolute temperature range. Maximum Rating condition for extended periods may affect device
Note 3:
See applications section for more information. reliability and lifetime.
Note 4:
Start-Up mode occurs when VOUT is less than VFBP*64/3.
Note 2:
The LT8415E is guaranteed to meet performance specifications
Note 5:
See Timing Diagram. Rise times are measured from 4V to 30V and from 0°C to 125°C junction temperature. Specifications over the –40°C fall times are measured from 30V to 4V. Delay times are measured from to 125°C operating junction temperature range are assured by design, the IN1,IN2 transition to when the OUT1,OUT2 voltage has risen to 4V or characterization and correlation with statistical process controls. The decreased to 30V.
TYPICAL PERFORMANCE CHARACTERISTICS TA = 25°C, unless otherwise noted. Switching Frequency vs Load Current Load Regulation Vout vs FBP Voltage
1000 0.6 50 VCC = 3.6V VCC = 3.6V VOUT = 16V VOUT = 16V 800 FIGURE 4 CIRCUIT 0.4 FIGURE 4 CIRCUIT 40 0.2 600 30 TAGE (V) 0 TAGE CHANGE (%) 400 20 –0.2 OUTPUT VOL SWITCHING FREQUENCY (kHz) 200 OUTPUT VOL 10 –0.4 0 –0.6 0 0 1 2 3 0 1 2 3 0 0.5 1 1.5 2 LOAD CURRENT (mA) LOAD CURRENT (mA) FBP VOLTAGE (V) 8415 G01 8415 G02 8415 G03 8415fb For more information www.linear.com/LT8415 3
ELECTRICAL CHARACTERISTICS The
l
denotes the specifications which apply over the full operating temperature range, otherwise specifications are TA = 25°C. VIN = 3.0V, VSHDN = VIN unless otherwise noted. (Note 2) PARAMETER CONDITIONS MIN TYP MAX UNITS
PMOS Disconnect Current Limit 14 19 25 mA PMOS Disconnect VCAP - VOUT IOUT = 1mA 50 mV Internal Resistor Divider Ratio l 31.6 31.85 32.2 FBP pin Bias Current VFBP = 0.5V, Current Flows Out of Pin l 1.3 30 nA SHDN Minimum Input Voltage High SHDN Rising l 1.20 1.30 1.45 V SHDN Input Voltage High hysteresis 60 mV SHDN Hysteresis Current (Note 3) 0.08 0.1 0.14 µA SHDN Input Voltage Low 0.3 V SHDN Pin Bias Current VSHDN = 3V 0 1 µA VSHDN = 16V 2 3 µA IN1,IN2 Minimum Input Voltage High l 1.1 V IN1,IN2 Input Voltage Low l 0.3 V OUT1,OUT2 Rise Time VOUT = 34V, CLOAD = 200pF (Note 5) 2.5 µs OUT1,OUT2 Fall Time VOUT = 34V, CLOAD = 200pF (Note 5) 3 µs OUT1,OUT2 Rise Delay VOUT = 34V, CLOAD = 200pF (Note 5) 4 µs OUT1,OUT2 Fall Delay VOUT = 34V, CLOAD = 200pF (Note 5) 2 µs Half-bridge PMOS Voltage Drop VOUT – VOUT1,OUT2 IN1,IN2 = 2V, 0.1mA Load From OUT1,OUT2 70 mV Half-bridge NMOS Voltage Drop VOUT1,OUT2 IN1,IN2 = 0V, 0.1mA Current Into OUT1,OUT2 85 mV
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings LT8415I is guaranteed over the full –40°C to 125°C operating junction may cause permanent damage to the device. Exposure to any Absolute temperature range. Maximum Rating condition for extended periods may affect device
Note 3:
See applications section for more information. reliability and lifetime.
Note 4:
Start-Up mode occurs when VOUT is less than VFBP*64/3.
Note 2:
The LT8415E is guaranteed to meet performance specifications
Note 5:
See Timing Diagram. Rise times are measured from 4V to 30V and from 0°C to 125°C junction temperature. Specifications over the –40°C fall times are measured from 30V to 4V. Delay times are measured from to 125°C operating junction temperature range are assured by design, the IN1,IN2 transition to when the OUT1,OUT2 voltage has risen to 4V or characterization and correlation with statistical process controls. The decreased to 30V.
TYPICAL PERFORMANCE CHARACTERISTICS TA = 25°C, unless otherwise noted. Switching Frequency vs Load Current Load Regulation Vout vs FBP Voltage
1000 0.6 50 VCC = 3.6V VCC = 3.6V VOUT = 16V VOUT = 16V 800 FIGURE 4 CIRCUIT 0.4 FIGURE 4 CIRCUIT 40 0.2 600 30 TAGE (V) 0 TAGE CHANGE (%) 400 20 –0.2 OUTPUT VOL SWITCHING FREQUENCY (kHz) 200 OUTPUT VOL 10 –0.4 0 –0.6 0 0 1 2 3 0 1 2 3 0 0.5 1 1.5 2 LOAD CURRENT (mA) LOAD CURRENT (mA) FBP VOLTAGE (V) 8415 G01 8415 G02 8415 G03 8415fb For more information www.linear.com/LT8415 3