Datasheet AD847 (Analog Devices) - 6

AD847 ABSOLUTE MAXIMUM RATINGS1 ESD SUSCEPTIBILITY
Supply Voltage . ± 18 V ESD (electrostatic discharge) sensitive device. Electrostatic Internal Power Dissipation2 charges as high as 4000 volts, which readily accumulate on the Plastic (N) . 1.2 Watts human body and on test equipment, can discharge without de- Small Outline (R) . 0.8 Watts tection. Although the AD847 features proprietary ESD protec- Cerdip (Q) . 1.1 Watts tion circuitry, permanent damage may still occur on these Input Voltage . ± VS devices if they are subjected to high energy electrostatic dis- Differential Input Voltage . ± 6 V charges. Therefore, proper ESD precautions are recommended Storage Temperature Range (Q) . –65°C to +150°C to avoid any performance degradation or loss of functionality. (N, R) . –65°C to +125°C Junction Temperature . 175°C Lead Temperature Range (Soldering 60 sec) . +300°C NOTES 1Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2Mini-DIP Package: θJA = 100°C/Watt; θJC = 33°C/Watt Cerdip Package: θJA = 110°C/Watt; θJC = 30°C/Watt Small Outline Package: θJA = 155°C/Watt; θJC = 33°C/Watt
METALIZATION PHOTOGRAPH
Contact factory for latest dimensions. Dimensions shown in inches and (mm).
ORDERING GUIDE Temperature Package Package Models* Range –
8
C Description Option
AD847JN 0 to +70 Plastic N-8 AD847JR 0 to +70 SOIC R-8 AD847AQ –40 to +85 Cerdip Q-8 AD847AR –40 to +85 SOIC R-8 AD847SQ –55 to +125 Cerdip Q-8 AD847SQ/883B –55 to +125 Cerdip Q-8 5962-8964701PA –55 to +125 Cerdip Q-8 *AD847 also available in J and S grade chips, and AD847JR and AD847AR are available *in tape and reel. –4– REV. F