Datasheet Infineon IGB110S101 — Datenblatt
| Hersteller | Infineon |
| Serie | IGB110S101 |
The IGB110S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs.
Datenblätter
Datasheet IGB110S101
PDF, 1.2 Mb, Sprache: en, Revision: 01_00, Datei hochgeladen: Apr 23, 2025, Seiten: 18
The IGB110S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs
The IGB110S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs
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Detaillierte Beschreibung
Thanks to its low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage and high-current applications.
Status
| IGB110S101XTMA1 | |
|---|---|
| Lifecycle Status | Active (Recommended for new designs) |
Modellreihe
Serie: IGB110S101 (1)
Herstellerklassifikation
- Power > Gallium nitride (GaN) > GaN transistors