Datasheet Analog Devices HMC407MS8GE — Datenblatt

HMC407MS8G / 407MS8GE
v04.1019 GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 -7 GHz Typical Applications Features This amplifier is ideal for use as a power
amplifier for 5 -7 GHz applications: Gain: 15 dB • UNII 28% PAE • HiperLAN Supply Voltage: +5V Saturated Power: +29 dBm AMPLIFIERS -LINEAR & POWER -SMT 9 Power Down Capability
No External Matching Required Functional Diagram General Description
The HMC407MS8G & HMC407MS8GE are high
efficiency GaAs InGaP Heterojunction Bipolar
Transistor (HBT) MMIC Power amplifiers which
operate between 5 and 7 GHz. The amplifier requires
no external matching to achieve operation and is
thus truly 50 Ohm matched at input and output. The
amplifier is packaged in a low cost, surface mount
8 leaded package with an exposed base for improved RF and thermal performance. The amplifier
provides 15 dB of gain, +29 dBm of saturated power
at 28% PAE from a +5V supply voltage. Power down
capability is available to conserve current consumption when the amplifier is not in use. Electrical Specifications, TA = +25° C, Vs = 5V, Vpd = 5V
Parameter Min. Frequency Range
Gain 10 Gain Variation Over Temperature
Input Return Loss Min. 21 15 18 0.025 0.035 Saturated Output Power (Psat) 25 12 32 Noise Figure 37 Max. Units
GHz 15 18 dB 0.025 0.035 dB/ °C 12 dB 15 dB 22 25 dBm 29 dBm 36 40 dBm 29 Output Third Order Intercept (IP3) Typ.
5.6 -6.0 15 Output Power for 1 dB Compression (P1dB) 9-1 Max. 12 Output Return Loss 5.5 5.5 dB 0.002 / 230 0.002 / 230 mA Vpd = 5V 7 7 mA tON, tOFF 30 30 ns Supply Current (Icq) Vpd = 0V/5V Control Current (Ipd)
Switching Speed Typ.
5-7 Information …