Datasheet HMC407MS8G, 407MS8GE (Analog Devices)
| Hersteller | Analog Devices |
| Beschreibung | GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 7 GHz |
| Seiten / Seite | 6 / 1 — HMC407MS8G / 407MS8GE. GaAs InGaP HBT MMIC. POWER AMPLIFIER, 5 - 7 GHz. … |
| Dateiformat / Größe | PDF / 921 Kb |
| Dokumentensprache | Englisch |
HMC407MS8G / 407MS8GE. GaAs InGaP HBT MMIC. POWER AMPLIFIER, 5 - 7 GHz. Typical Applications. Features. Functional Diagram
Modelllinie für dieses Datenblatt
Textversion des Dokuments
HMC407MS8G / 407MS8GE
v04.1019
GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 7 GHz Typical Applications Features
This amplifier is ideal for use as a power Gain: 15 dB amplifier for 5 - 7 GHz applications: Saturated Power: +29 dBm • UNII 28% PAE • HiperLAN Supply Voltage: +5V 9 Power Down Capability No External Matching Required T M
Functional Diagram General Description
The HMC407MS8G & HMC407MS8GE are high R - S efficiency GaAs InGaP Heterojunction Bipolar E Transistor (HBT) MMIC Power amplifiers which W operate between 5 and 7 GHz. The amplifier requires O no external matching to achieve operation and is thus truly 50 Ohm matched at input and output. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for im- R & P proved RF and thermal performance. The amplifier A provides 15 dB of gain, +29 dBm of saturated power E at 28% PAE from a +5V supply voltage. Power down IN capability is available to conserve current consum- ption when the amplifier is not in use. S - L R IE
Electrical Specifications, T = +25° C, Vs = 5V, Vpd = 5V A
LIF P Parameter Min. Typ. Max. Min. Typ. Max. Units M Frequency Range 5 - 7 5.6 - 6.0 GHz A Gain 10 15 18 12 15 18 dB Gain Variation Over Temperature 0.025 0.035 0.025 0.035 dB/ °C Input Return Loss 12 12 dB Output Return Loss 15 15 dB Output Power for 1 dB Compression (P1dB) 21 25 22 25 dBm Saturated Output Power (Psat) 29 29 dBm Output Third Order Intercept (IP3) 32 37 36 40 dBm Noise Figure 5.5 5.5 dB Supply Current (Icq) Vpd = 0V/5V 0.002 / 230 0.002 / 230 mA Control Current (Ipd) Vpd = 5V 7 7 mA Switching Speed tON, tOFF 30 30 ns I F nf o or r p mati roic n e fu, d rnise h leiv d e b ry y , a Analn o d t g D o p evic leac s i e o s belrid ev e e rs d t : A o b n e a a lco c g D urat e e a v n ic d e re s li , I abl n e c . H , O owe n vee T r, n e o chn F o o lo r pg ri y W ce a , d y e , P liv . e O ry . B , a o n x 9 d t 10 o pl 6 a , N c o e o r r w deo r o s d, M : AnalA 0 o 2 g D 0 e 6 vi 2 c -e9 s 10 , I 6 nc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
9 - 1
rights of third parties that may result from its use. S P pe h ci o ficn ate io: 78 ns su1 b - j 3 ec 2 t t 9- o c 4 h 7 an 0 g 0 • O e withourd t n e otir o ce n . N li o ne at www.analog.com license is granted by implication or otherwise under an A y pa p te p n li t oca r p taito e n S nt rig u ht pp s o o f A rnta: P lo h g D o e n vi e ce : 1 s. -80 P 0 ho-A neNA : 7 L 81 O -3 G 2 -9D -4700 • Order online at www.analog.com Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D
v04.1019
GaAs InGaP HBT MMIC POWER AMPLIFIER, 5 - 7 GHz Typical Applications Features
This amplifier is ideal for use as a power Gain: 15 dB amplifier for 5 - 7 GHz applications: Saturated Power: +29 dBm • UNII 28% PAE • HiperLAN Supply Voltage: +5V 9 Power Down Capability No External Matching Required T M
Functional Diagram General Description
The HMC407MS8G & HMC407MS8GE are high R - S efficiency GaAs InGaP Heterojunction Bipolar E Transistor (HBT) MMIC Power amplifiers which W operate between 5 and 7 GHz. The amplifier requires O no external matching to achieve operation and is thus truly 50 Ohm matched at input and output. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for im- R & P proved RF and thermal performance. The amplifier A provides 15 dB of gain, +29 dBm of saturated power E at 28% PAE from a +5V supply voltage. Power down IN capability is available to conserve current consum- ption when the amplifier is not in use. S - L R IE
Electrical Specifications, T = +25° C, Vs = 5V, Vpd = 5V A
LIF P Parameter Min. Typ. Max. Min. Typ. Max. Units M Frequency Range 5 - 7 5.6 - 6.0 GHz A Gain 10 15 18 12 15 18 dB Gain Variation Over Temperature 0.025 0.035 0.025 0.035 dB/ °C Input Return Loss 12 12 dB Output Return Loss 15 15 dB Output Power for 1 dB Compression (P1dB) 21 25 22 25 dBm Saturated Output Power (Psat) 29 29 dBm Output Third Order Intercept (IP3) 32 37 36 40 dBm Noise Figure 5.5 5.5 dB Supply Current (Icq) Vpd = 0V/5V 0.002 / 230 0.002 / 230 mA Control Current (Ipd) Vpd = 5V 7 7 mA Switching Speed tON, tOFF 30 30 ns I F nf o or r p mati roic n e fu, d rnise h leiv d e b ry y , a Analn o d t g D o p evic leac s i e o s belrid ev e e rs d t : A o b n e a a lco c g D urat e e a v n ic d e re s li , I abl n e c . H , O owe n vee T r, n e o chn F o o lo r pg ri y W ce a , d y e , P liv . e O ry . B , a o n x 9 d t 10 o pl 6 a , N c o e o r r w deo r o s d, M : AnalA 0 o 2 g D 0 e 6 vi 2 c -e9 s 10 , I 6 nc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
9 - 1
rights of third parties that may result from its use. S P pe h ci o ficn ate io: 78 ns su1 b - j 3 ec 2 t t 9- o c 4 h 7 an 0 g 0 • O e withourd t n e otir o ce n . N li o ne at www.analog.com license is granted by implication or otherwise under an A y pa p te p n li t oca r p taito e n S nt rig u ht pp s o o f A rnta: P lo h g D o e n vi e ce : 1 s. -80 P 0 ho-A neNA : 7 L 81 O -3 G 2 -9D -4700 • Order online at www.analog.com Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D