Datasheet Analog Devices HMC8205BF10 — Datenblatt

0.4 GHz to 6 GHz, 35 W, GaN,
Power Amplifier
HMC8205BCHIPS Data Sheet
FEATURES FUNCTIONAL BLOCK DIAGRAM
2
VDD2 RFOUT APPLICATIONS
Military jammers
Commercial and military radar
Power amplifier stage for wireless infrastructure
Test and measurement equipment VGG1
1 3 4 RFIN
VDD1 5 13790-001 High output power: 45.5 dBm typical at PIN = 24 dBm
High power gain: 22 dB typical at PIN = 24 dBm
High PAE: 40% typical at PIN = 28 dBm
Die size: 4.8 mm × 3.4 mm × 0.1 mm Figure 1. GENERAL DESCRIPTION
The HMC8205BCHIPS is a gallium nitride (GaN), broadband
power amplifier that delivers 45.5 dBm (35 W) with 40% power
added efficiency (PAE) across an instantaneous bandwidth of
0.4 GHz to 6 GHz. No external matching is required to achieve
full band operation. No external inductor is required to bias the Rev. A amplifier. In addition, dc blocking capacitors for the RFIN and
RFOUT pins are integrated into the HMC8205BCHIPS.
The HMC8205BCHIPS is ideal for pulsed or continuous wave
(CW) applications, such as military jammers, wireless …

0.3 GHz to 6 GHz, 35 W, GaN
Power Amplifier
HMC8205BF10 Data Sheet FUNCTIONAL BLOCK DIAGRAM High PSAT: 46 dBm
High power gain: 20 dB
High PAE: 38%
Instantaneous bandwidth: 0.3 GHz to 6 GHz
Supply voltage: VDD = 50 V at 1300 mA
10-lead LDCC package 1 HMC8205BF10 10 VDD2 NC VDD2 APPLICATIONS
Military jammers
Commercial and military radar
Power amplifier stage for wireless infrastructure
Test and measurement equipment NC
2 9 3 8 RFIN NC RFOUT 7 4 VGG1 NC
6 5 VDD1 PACKAGE BASE
GND 13790-001 FEATURES Figure 1. GENERAL DESCRIPTION
The HMC8205BF10 is a gallium nitride (GaN) broadband
power amplifier delivering 45.5 dBm (35 W) with 38% power
added efficiency (PAE) across an instantaneous bandwidth of
0.3 GHz to 6 GHz. No external matching is required to achieve
full band operation. Additionally, no external inductor is
required to bias the amplifier. Also, dc blocking capacitors for
the RFIN and RFOUT pins are integrated into the HMC8205BF10. Rev. C The HMC8205BF10 is ideal for pulsed or continuous wave
(CW) applications, such as military jammers, wireless …

0.3 GHz to 6 GHz, 35 W, GaN
Power Amplifier
HMC8205BF10 Data Sheet FUNCTIONAL BLOCK DIAGRAM High PSAT: 46 dBm
High power gain: 20 dB
High PAE: 38%
Instantaneous bandwidth: 0.3 GHz to 6 GHz
Supply voltage: VDD = 50 V at 1300 mA
10-lead LDCC package 1 HMC8205BF10 10 VDD2 NC VDD2 APPLICATIONS NC
2 9 3 8 RFIN Military jammers
Commercial and military radar
Power amplifier stage for wireless infrastructure
Test and measurement equipment NC RFOUT 7 4 VGG1 NC
6 5 VDD1 PACKAGE BASE
GND 13790-001 FEATURES Figure 1. GENERAL DESCRIPTION
The HMC8205BF10 is a gallium nitride (GaN) broadband
power amplifier delivering 45.5 dBm (35 W) with 38% power
added efficiency (PAE) across an instantaneous bandwidth of
300 MHz to 6 GHz. No external matching is required to achieve
full band operation. Additionally, no external inductor is
required to bias the amplifier. Also, dc blocking capacitors for
the RFIN and RFOUT pins are integrated into the
HMC8205BF10. Rev. 0 The HMC8205BF10 is ideal for pulsed or continuous wave
(CW) applications, such as military jammers, wireless …