Datasheet Central Semiconductor CMHZ4697 TR — Datenblatt
Hersteller | Central Semiconductor |
Serie | CMHZ4697 |
Artikelnummer | CMHZ4697 TR |
Oberflächenmontierte Silizium-Low-Level-Zenerdioden 500 MW, 1,8 - 43 Volt, 5% Toleranz
Datenblätter
SURFACE MOUNT SILICON LOW LEVEL ZENER DIODES 500mW, 1.8 - 43 VOLT 5% TOLERANCE
CMHZ4678 THRU CMHZ4717
SURFACE MOUNT SILICON
LOW LEVEL ZENER DIODES
500mW, 1.8 THRU 43 VOLT
5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMHZ4678 series
low level silicon Zener diode is a highly reliable voltage
regulator designed for applications requiring an extremely
low operating current and low leakage.
MARKING CODE: SEE MARKING CODE ON
ELECTRICAL CHARACTERISTIC TABLE SOD-123 CASE MAXIMUM RATINGS: (TL=75°C)
Power Dissipation
Operating and Storage Junction Temperature SYMBOL
PD
TJ, Tstg UNIT
mW
°C 500
-65 to +150 ELECTRICAL CHARACTERISTICS: (TA=25°C), VF=1.5V MAX @ IF=100mA (for all types) IZT
μA μA V mA CMHZ4678 VZ @ IZT
MIN
NOM
MAX
V …
0.5 Watt Zener Diode Chip
PROCESS CPZ19 Zener Diode
0.5 Watt Zener Diode Chip PROCESS DETAILS
Process EPITAXIAL PLANAR Die Size 17.7 x 17.7 MILS Die Thickness 7.5 MILS Anode Bonding Pad Area 11 x 11 MILS Top Side Metalization Al -13,000Å Back Side Metalization Au -14,000Å GEOMETRY
GROSS DIE PER 4 INCH WAFER
36,642
PRINCIPAL DEVICE TYPES
CMPZ5235B
THRU
CMPZ5261B BACKSIDE CATHODE R0 R6 (22-February 2012)
w w w. c e n t r a l s e m i . c o m PROCESS CPZ19 Typical Electrical Characteristics R6 (22-February 2012)
w w w. c e n t r a l s e m i . c o m BARE DIE PACKING OPTIONS BARE DIE IN TRAY (WAFFLE) PACK
CT: Singulated die in tray (waffle) pack.
(example: CP211-PART NUMBER-CT) CM: S ingulated die in tray (waffle) pack 100% visually inspected as
per MIL-STD-750, (method 2072 transistors, method 2073 diodes).
(example: CP211-PART NUMBER-CM) UNSAWN WAFER
WN: Full wafer, unsawn, 100% tested with reject die inked.
(example: CP211-PART NUMBER-WN) SAWN WAFER ON PLASTIC RING
WR: F ull wafer, sawn and mounted on plastic ring,
100% tested with reject die inked.
(example: CP211-PART NUMBER-WR) Please note: Sawn Wafer on Metal Frame (WS)
is possible as a special order. Please contact your
Central Sales Representative at 631-435-1110.
Visit the Central website for a complete listing of specifications: …
Zener Diode Die 500mW, 1.8 - 43 VOLT
CPZ28X-1N4678 THRU
CPZ28X-1N4717
Zener Diode Die
500mW, 1.8 THRU 43 VOLT w w w. c e n t r a l s e m i . c o m The CPZ28X-1N4678 thru CPZ28X-1N4717 are silicon Zener diodes ideal for all types of commercial,
industrial, entertainment, and computer applications.
MECHANICAL SPECIFICATIONS:
Die Size BACKSIDE CATHODE R0 13 x 13 MILS Die Thickness 5.5 MILS Anode Bonding Pad Size 7.0 x 7.0 MILS Top Side Metalization Ti/Al – 13,000Å Back Side Metalization Au-As – 9,000Å Scribe Alley Width 1.97 MILS Wafer Diameter 5 INCHES Gross Die Per Wafer 101,184 MAXIMUM RATINGS:
Operating and Storage Junction Temperature SYMBOL
TJ, Tstg UNITS
°C -65 to +150 ELECTRICAL CHARACTERISTICS: (TA=25°C) VF=1.5V MAX @ IF=100mA (for all types)
Zener
Voltage
VZ @ IZT Type Test
Current Maximum
Reverse Leakage
Current Maximum
Voltage
Change* Maximum
Regulator
Current MIN NOM MAX IZT IR @ VR ΔVZ IZM V V V μA μA V V mA CPZ28X-1N4678 1.710 1.8 1.890 50 7.5 1.0 0.70 120.0 CPZ28X-1N4679 1.900 2.0 2.100 50 5.0 1.0 0.70 110.0 CPZ28X-1N4680 2.090 2.2 2.310 50 4.0 1.0 0.75 100.0 CPZ28X-1N4681 2.280 2.4 2.520 50 2.0 1.0 0.80 95.0 CPZ28X-1N4682 2.565 2.7 2.835 50 1.0 1.0 0.85 90.0 CPZ28X-1N4683 2.850 3.0 3.150 50 0.8 1.0 0.90 85.0 CPZ28X-1N4684 3.135 3.3 3.465 50 7.5 1.5 0.95 80.0 CPZ28X-1N4685 3.420 3.6 3.780 50 7.5 2.0 0.95 75.0 CPZ28X-1N4686 3.705 3.9 4.095 50 5.0 2.0 0.97 70.0 CPZ28X-1N4687 4.085 4.3 4.515 50 4.0 2.0 0.99 65.0 CPZ28X-1N4688 4.465 4.7 4.935 50 10 3.0 0.99 60.0 CPZ28X-1N4689 4.845 5.1 5.355 50 10 3.0 0.97 55.0 CPZ28X-1N4690 5.320 5.6 5.880 50 10 4.0 0.96 50.0 CPZ28X-1N4691 5.890 6.2 6.510 50 10 5.0 0.95 45.0 CPZ28X-1N4692 6.460 6.8 7.140 50 10 5.1 0.90 35.0 CPZ28X-1N4693 7.125 7.5 7.875 50 10 5.7 0.75 31.8 CPZ28X-1N4694 7.790 8.2 8.610 50 1.0 6.2 0.50 29.0 * ΔVZ=VZ @ 100μA Minus VZ @ 10μA R0 (26-June 2017) CPZ28X-1N4678 THRU
CPZ28X-1N4717
Zener Diode Die
500mW, 1.8 THRU 43 VOLT w w w. c e n t r a l s e m i . c o m ELECTRICAL CHARACTERISTICS -Continued: (TA=25°C) VF=1.5V MAX @ IF=100mA (for all types) …
CMHZ4678 THRU CMHZ4717 SURFACE MOUNT SILICON LOW LEVEL ZENER DIODES 500mW, 1.8 THRU 43 VOLT 5% TOLERANCE
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHZ4678 series low level silicon Zener diode is a highly reliable voltage regulator designed for applications requiring an extremely low operating current and low leakage. MARKING CODE: SEE MARKING CODE ON ELECTRICAL CHARACTERISTIC TABLE SOD-123 CASE MAXIMUM RATINGS: (TL=75°C) Power Dissipation Operating and Storage Junction Temperature SYMBOL PD TJ, Tstg 500 -65 to +150 UNIT mW °C ELECTRICAL CHARACTERISTICS: (TA=25°C), VF=1.5V MAX @ IF=100mA (for all types)
TEST CURRENT IZT A 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 MAXIMUM REVERSE CURRENT IR @ VR A 7.5 5.0 4.0 2.0 1.0 0.8 7.5 7.5 5.0 4.0 10 10 10 10 10 10 1.0 1.0 1.0 V 1.0 1.0 1.0 1.0 1.0 1.0 1.5 2.0 2.0 2.0 3.0 3.0 4.0 5.0 5.1 5.7 6.2 6.6 6.9 MAXIMUM ZENER CURRENT IZM mA 120.0 110.0 100.0 95.0 90.0 85.0 80.0 75.0 70.0 65.0 60.0 55.0 50.0 45.0 35.0 31.8 29.0 27.4 26.2 MAXIMUM NOISE DENSITY ND @ IZT V/ 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 4.0 5.0 40 40 40 40 40 Hz CCC CCD CCE CCF CCH CCJ CCK CCM CCN CCP CCT CCU CCV CCA CCX CCY CCZ CDC CDD ZENER VOLTAGE TYPE VZ @ IZT MIN NOM MAX V V V 1.710 1.8 1.890 1.900 2.090 2.280 2.565 2.850 3.135 3.420 3.705 4.085 4.465 4.845 5.320 5.890 6.460 7.125 7.790 8.265 8.645 2.0 2.2 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 8.7 9.1 2.100 2.310 2.520 2.835 3.150 3.465 3.780 4.095 4.515 4.935 5.355 5.880 6.510 7.140 7.875 8.610 9.135 9.555 MARKING CODE CMHZ4678 CMHZ4679 CMHZ4680 CMHZ4681 CMHZ4682 CMHZ4683 CMHZ4684 CMHZ4685 CMHZ4686 CMHZ4687 CMHZ4688 CMHZ4689 CMHZ4690 CMHZ4691 CMHZ4692 CMHZ4693 CMHZ4694 CMHZ4695 CMHZ4696 R7 (23-September 2015) CMHZ4678 THRU CMHZ4717 SURFACE MOUNT SILICON LOW LEVEL ZENER DIODES 500mW, 1.8 THRU 43 VOLT 5% TOLERANCE ELECTRICAL CHARACTERISTICS -Continued: (TA=25°C), VF=1.5V MAX @ IF=100mA (for all types)
TEST CURRENT IZT MAX V 10.50 11.55 12.60 13.65 14.70 15.75 16.80 17.85 18.90 19.95 21.00 23.10 25.20 26.25 28.35 29.40 31.50 34.65 37.80 40.95 45.15 A 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 MAXIMUM REVERSE CURRENT IR @ VR A 1.0 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 V 7.6 8.4 9.1 9.8 10.6 11.4 12.1 12.9 13.6 14.4 15.2 16.7 18.2 19.0 20.4 21.2 22.8 25.0 27.3 29.6 32.6 MAXIMUM ZENER CURRENT IZM mA 24.8 21.6 20.4 19.0 17.5 16.3 15.4 14.5 13.2 12.5 11.9 10.8 9.9 9.5 8.8 8.5 7.9 7.2 6.6 6.1 5.5 MAXIMUM NOISE DENSITY ND @ IZT V/ 40 40 40 40 40 40 40 …
Spice Models
******
* Spice Model
* Item: CMHZ4697
* Date: 4/11/16
* Revision History: A
* ==========================================================
* This model was developed by:
* Central Semiconductor Corp.
* 145 Adams Avenue
* Hauppauge, NY 11788
*
* These models are subject to change without notice.
* Users may not directly or indirectly re-sell or
* re-distribute this model. This model may not
* be modified, or altered without the consent of Central Semiconductor Corp.
*
* For more information on this model contact
* Central Semiconductor Corp. at:
* (631) 435-1110 or Engineering@centralsemi.com
* http://www.centralsemi.com
*
* Note: A CMHZ4697 is a zener diode
* ==========================================================
…
Preise
Status
Lifecycle Status | Active (Recommended for new designs) |
Parameter
Marking Code | CDE |