Datasheets - Bipolare Arrays & Module - 5
Unterabschnitt: "Bipolare Arrays & Module"
Hersteller
Allegro Analog Devices Central Semiconductor Diodes Fairchild Infineon Intersil Magnatec MCC National Semiconductor NTE Electronics NXP ON Semiconductor Philips Rohm Semelab Semtech Solid State STMicroelectronics Texas Instruments THAT Corporation ToshibaSuchergebnisse: 400 Ausgabe: 81-100
Aussicht: Aufführen / Bilder
Part Number: ULN2003ADR2G Manufacturer: ON Semiconductor Description: DARLINGTON TRANSISTOR ARRAY, NPN, 7, 50 V, SOIC Specifications: Continuous Collector Current Ic: 500 mA Number of Pins: 16 Number of Transistors: 7 Operating Temperature Range: ...
Part Number: MUN5312DW1T1G Manufacturer: ON Semiconductor Description: BRT TRANSISTOR, 50 V, 22K/22KOHM, SOT-363 Specifications: Collector Emitter Voltage V(br)ceo: 50 V DC Collector Current: -100 mA DC Current Gain: 100 Power Dissipation: 187 mW ...
Part Number: MJB44H11T4G Manufacturer: ON Semiconductor Description: POWER TRANSISTOR, NPN, 80 V, D2-PAK Specifications: Collector Emitter Voltage V(br)ceo: 80 V Number of Pins: 3 Operating Temperature Range: -55°C to +150°C Power Dissipation: 50 W ...- Part Number: MJB42CT4G Manufacturer: ON Semiconductor Description: POWER TRANSISTOR, PNP, -100 V D2-PAK Specifications: Collector Emitter Voltage V(br)ceo: 100 V Number of Pins: 3 Operating Temperature Range: -65°C to +150°C Power Dissipation: 65 W ...
- Part Number: MJB41CT4G Manufacturer: ON Semiconductor Description: POWER TRANSISTOR, NPN, 100 V, D2-PAK Specifications: Collector Emitter Voltage V(br)ceo: 100 V Number of Pins: 3 Operating Temperature Range: -65°C to +150°C Power Dissipation: 65 W ...
Part Number: MUN5335DW1T1G Manufacturer: ON Semiconductor Description: BRT TRANSISTOR, 50 V, 47K/2.2KOHM, SOT363 Specifications: Collector Emitter Voltage V(br)ceo: 50 V DC Collector Current: -100 mA DC Current Gain: 140 Power Dissipation: 187 mW ...- Part Number: MUN5313DW1T1G Manufacturer: ON Semiconductor Description: BRT TRANSISTOR, 50 V, 47K/47KOHM, SC88 Download Data Sheet Docket: MUN5311DW1T1G Series Dual Bias Resistor Transistors Preferred Devices NPN and PNP Silicon Surface Mount ...
- Part Number: MUN5230DW1T1G Manufacturer: ON Semiconductor Description: BRT TRANSISTOR, 50 V, 1K/1KOHM, SOT-363 Download Data Sheet Docket: MUN5211DW1T1G Series Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors ...
- Part Number: MUN5111DW1T1G Manufacturer: ON Semiconductor Description: BRT TRANSISTOR, 50 V, 10K/10KOHM, SOT-363 Download Data Sheet Docket: MUN5111DW1T1G Series Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors ...
Part Number: ULQ2004A Manufacturer: STMicroelectronics Description: DARLINGTON ARRAY, 2803, DIP18 Download Data Sheet Docket: ® ULN2801A ULN2802A - ULN2803A ULN2804A - ULN2805A EIGHT DARLINGTON ARRAYS . . . . . . . EIGHT DARLINGTONS WITH COMMON ...
Part Number: PUMH19 Manufacturer: NXP Description: TRANSISTOR, DIGITAL, DUAL, SOT-363 Specifications: Collector-to-Emitter Breakdown Voltage: 50 V DC Current Gain Min: 100 DC Current Gain: 1 mA Full Power Rating Temperature: 25°C Max Current Ic ...- Part Number: PUMH15 Manufacturer: NXP Description: TRANSISTOR, DUAL DIGITAL SOT-363 Specifications: Collector-to-Emitter Breakdown Voltage: 50 V DC Current Gain Min: 30 DC Current Gain: 10 mA Full Power Rating Temperature: 25°C Max Current Ic ...
- Part Number: PUMF12 Manufacturer: NXP Description: TRANSISTOR, DIGITAL, DUAL, SOT-363 Specifications: Collector-to-Emitter Breakdown Voltage: 50 V DC Current Gain Min: 120 DC Current Gain: 1 mA Frequency: 100 Hz Max Current Gain Hfe: 80 Max Current ...
- Part Number: PUMB9 Manufacturer: NXP Description: TRANSISTOR, DIGITAL, DUAL, SOT-363 Simulation Model Specifications: Collector-to-Emitter Breakdown Voltage: 50 V DC Current Gain Min: 100 DC Current Gain: 5 mA Full Power Rating Temperature: 25°C ...
- Part Number: PUMB13 Manufacturer: NXP Description: TRANSISTOR, DIGITAL, DUAL, SOT-363 Simulation Model Specifications: Collector Emitter Voltage V(br)ceo: 50 V Continuous Collector Current Ic Max: 100 A Current Ic Continuous a Max: 100 A DC Current ...
- Part Number: PUMB1 Manufacturer: NXP Description: TRANSISTOR, DUAL DIGITAL SOT-363 Simulation Model Specifications: Collector-to-Emitter Breakdown Voltage: 50 V DC Current Gain Min: 60 DC Current Gain: 5 mA Full Power Rating Temperature: 25°C Max ...
Part Number: PMD2001D Manufacturer: NXP Description: TRANSISTOR, NPN/PNP, 40 V, SSOT-6 Download Data Sheet Docket: PMD2001D MOSFET driver Rev. 02 -- 28 August 2009 Product data sheet 1. Product profile 1.1 General description Simulation Model ...
Part Number: PEMZ7 Manufacturer: NXP Description: TRANSISTOR, NPN/PNP, SOT-666 Simulation Model Specifications: Collector Emitter Voltage V(br)ceo: 12 V Continuous Collector Current Ic Max: 0.1 A Current Ic Continuous a Max: 0.5 A DC Current Gain ...- Part Number: PBLS4005Y Manufacturer: NXP Description: TRANSISTOR, SWITCH SOT-363 Simulation Model Specifications: Collector-to-Emitter Breakdown Voltage: 40 V Max Current Ic: 1000 mA Max Power Dissipation Ptot: 300 mW Mounting Type: SMD Number of ...
- Part Number: PBLS4005V Manufacturer: NXP Description: TRANSISTOR, SWITCH, SOT-666 Simulation Model Specifications: Collector-to-Emitter Breakdown Voltage: 40 V Max Current Ic Continuous a: 1000 mA Max Current Ic: 1000 mA Max Power Dissipation Ptot: ...