Datasheets - Bipolare Arrays & Module NXP
Unterabschnitt: "Bipolare Arrays & Module"
Hersteller: "NXP"
Hersteller
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65 V, 100 mA NPN / NPN-Universaltransistorpaar Spezifikationen: Kollektor-Emitter-Spannung V (br) ceo: 65 V. DC-Kollektorstrom: 100 mA Gleichstromverstärkung: 200 Anzahl der Stifte: 6 Betriebstemperaturbereich: -55 ° C bis + 150 ° C. ...
65 V, 100 mA NPN / PNP-Universaltransistor
- 65 V, 100 mA NPN / NPN-Universaltransistorpaar
Part Number: BC856S Manufacturer: NXP Description: TRANSISTOR, PNP/PNP, 65 V, SOT363 Download Data Sheet Docket: BC856S 65 V, 100 mA PNP/PNP general-purpose transistor Rev. 02 -- 19 February 2009 Product data sheet 1. Product profile 1.1 General ...- Part Number: PUMX1 Manufacturer: NXP Description: TRANSISTOR, DIGITAL, NPNNPN, SOT363 Download Data Sheet Docket: PUMX1 40 V, 100 mA NPN/NPN general-purpose transistor Rev. 04 -- 20 January 2010 Product data sheet 1. Product profile 1.1 General ...
Part Number: PUMH19 Manufacturer: NXP Description: TRANSISTOR, DIGITAL, DUAL, SOT-363 Specifications: Collector-to-Emitter Breakdown Voltage: 50 V DC Current Gain Min: 100 DC Current Gain: 1 mA Full Power Rating Temperature: 25°C Max Current Ic ...- Part Number: PUMH15 Manufacturer: NXP Description: TRANSISTOR, DUAL DIGITAL SOT-363 Specifications: Collector-to-Emitter Breakdown Voltage: 50 V DC Current Gain Min: 30 DC Current Gain: 10 mA Full Power Rating Temperature: 25°C Max Current Ic ...
- Part Number: PUMF12 Manufacturer: NXP Description: TRANSISTOR, DIGITAL, DUAL, SOT-363 Specifications: Collector-to-Emitter Breakdown Voltage: 50 V DC Current Gain Min: 120 DC Current Gain: 1 mA Frequency: 100 Hz Max Current Gain Hfe: 80 Max Current ...
- Part Number: PUMB9 Manufacturer: NXP Description: TRANSISTOR, DIGITAL, DUAL, SOT-363 Simulation Model Specifications: Collector-to-Emitter Breakdown Voltage: 50 V DC Current Gain Min: 100 DC Current Gain: 5 mA Full Power Rating Temperature: 25°C ...
- Part Number: PUMB13 Manufacturer: NXP Description: TRANSISTOR, DIGITAL, DUAL, SOT-363 Simulation Model Specifications: Collector Emitter Voltage V(br)ceo: 50 V Continuous Collector Current Ic Max: 100 A Current Ic Continuous a Max: 100 A DC Current ...
- Part Number: PUMB1 Manufacturer: NXP Description: TRANSISTOR, DUAL DIGITAL SOT-363 Simulation Model Specifications: Collector-to-Emitter Breakdown Voltage: 50 V DC Current Gain Min: 60 DC Current Gain: 5 mA Full Power Rating Temperature: 25°C Max ...
Part Number: PMD2001D Manufacturer: NXP Description: TRANSISTOR, NPN/PNP, 40 V, SSOT-6 Download Data Sheet Docket: PMD2001D MOSFET driver Rev. 02 -- 28 August 2009 Product data sheet 1. Product profile 1.1 General description Simulation Model ...
Part Number: PEMZ7 Manufacturer: NXP Description: TRANSISTOR, NPN/PNP, SOT-666 Simulation Model Specifications: Collector Emitter Voltage V(br)ceo: 12 V Continuous Collector Current Ic Max: 0.1 A Current Ic Continuous a Max: 0.5 A DC Current Gain ...- Part Number: PBLS4005Y Manufacturer: NXP Description: TRANSISTOR, SWITCH SOT-363 Simulation Model Specifications: Collector-to-Emitter Breakdown Voltage: 40 V Max Current Ic: 1000 mA Max Power Dissipation Ptot: 300 mW Mounting Type: SMD Number of ...
- Part Number: PBLS4005V Manufacturer: NXP Description: TRANSISTOR, SWITCH, SOT-666 Simulation Model Specifications: Collector-to-Emitter Breakdown Voltage: 40 V Max Current Ic Continuous a: 1000 mA Max Current Ic: 1000 mA Max Power Dissipation Ptot: ...
- Part Number: PBLS4004Y Manufacturer: NXP Description: TRANSISTOR, SWITCH, SOT-363 Simulation Model Specifications: Collector-to-Emitter Breakdown Voltage: 40 V Max Current Ic: 1000 mA Max Power Dissipation Ptot: 300 mW Mounting Type: SMD Number of ...
- Part Number: PBLS4001Y Manufacturer: NXP Description: TRANSISTOR, SWITCH, SOT-363 Simulation Model Specifications: Collector-to-Emitter Breakdown Voltage: 40 V DC Current Gain Min: 200 DC Current Gain: 10 mA Frequency: 100 Hz Max Current Gain Hfe: ...
- Part Number: PBLS1504V Manufacturer: NXP Description: TRANSISTOR, SWITCH SOT-666 Simulation Model Specifications: Collector-to-Emitter Breakdown Voltage: 15 V DC Current Gain Min: 200 DC Current Gain: 10 mA Frequency: 100 Hz Max Current Gain Hfe: ...
- Part Number: PUMH18 Manufacturer: NXP Description: TRANSISTOR, DIGITAL, DUAL, SOT-363 Specifications: Collector Emitter Voltage V(br)ceo: 50 V Collector Emitter Voltage Vces: 100 mV Continuous Collector Current Ic Max: 100 A Current Ic Continuous a ...
- Part Number: PBSS3515VS Manufacturer: NXP Description: TRANSISTOR, PNP, SOT-666 Download Data Sheet Simulation Model Specifications: Collector Emitter Voltage V(br)ceo: 15 V Collector Emitter Voltage Vces: -25 mV Continuous Collector Current Ic ...
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