Datasheets - MOSFET-Einzeltransistoren IXYS RF
Unterabschnitt: "MOSFET-Einzeltransistoren"
Hersteller: "IXYS RF"
Hersteller
Advanced Linear Devices Alpha & Omega Ampleon APT Avago Technologies Central Semiconductor Clare Cree Diodes Efficient Power Conversion Eudyna Devices Fairchild Freescale Fuji Electric HALO Inchange Semiconductor Infineon Integra Technologies International Rectifier International Wire Intersil IXYS IXYS RF JiLin Sino-Microelectronics Littelfuse MCC Microchip Microsemi Motorola Multicomp National Semiconductor New Jersey Semiconductor Nexperia Niko Semiconductor NTE Electronics NXP ON Semiconductor Panasonic Philips Renesas Rohm Sanyo Semelab Semikron Siliconix STMicroelectronics Taiwan Semiconductor Temic Texas Instruments Toshiba Vishay Wayon WolfspeedSuchergebnisse: 4 Ausgabe: 1-4
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Part Number: DE475-501N44A Manufacturer: IXYS RF Description: MOSFET, N, RF, DE475 Download Data Sheet Docket: DE475-501N44A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Test ...- Part Number: DE475-102N21A Manufacturer: IXYS RF Description: MOSFET, N, RF, DE475 Download Data Sheet Docket: DE475-102N21A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Test ...
Part Number: DE375-102N12A Manufacturer: IXYS RF Description: MOSFET, N, RF, DE375 Download Data Sheet Docket: DE375-102N12A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Test ...
Part Number: DE275-501N16A Manufacturer: IXYS RF Description: MOSFET, N, RF, DE275 Download Data Sheet Docket: DE275-501N16A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol VDSS VDGR VGS VGSM ID25 IDM ...
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