Datasheet BF862 (NXP) - 5

NXP Semiconductors Product specification N-channel junction FET BF862 MCD809 MCD810 40 300 handbook, halfpage handbook, halfpage IDSS g (mA) os (μS) 30 200 20 100 10 0 0 0 −0.5 −1 −1.5 0 10 20 30 VGSoff (V) IDSS (mA) VDS = 8 V; Tj = 25 C. VDS = 8 V; Tj = 25 C. Fig.4 Common-source output conductance as a Fig.3 Drain saturation current as a function of function of drain saturation current; gate-source cut-off voltage; typical values. typical values. MCD811 MCD812 60 60 handbook, halfpage handbook, halfpage yfs y (mS) fs (mS) 50 40 40 20 30 20 0 0 10 20 30 0 10 20 30 IDSS (mA) ID (mA) V V DS = 8 V; Tj = 25 C. DS = 8 V; Tj = 25 C. Fig.5 Forward transfer admittance as a function Fig.6 Forward transfer admittance as a function of drain saturation current; typical values. of drain current; typical values. 2000 Jan 05 5 Document Outline Features Applications Description Pinning SOT23 Quick reference data Limiting values Thermal characteristics Static characteristics Dynamic characteristics Package outline Data sheet status Definitions Disclaimers