Datasheet 2N3904, MMBT3904, PZT3904 (Fairchild) - 2

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 V 200 mA -55 to 150 °C IC
TJ, TSTG Collector Current -Continuous
Operating and Storage Junction Temperature Range Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty cycle operations. Thermal Characteristics
Values are at TA = 25°C unless otherwise noted. Symbol
PD Maximum Parameter
Total Device Dissipation Unit 2N3904 MMBT3904(3) PZT3904(4) 625 350 1,000 mW 2.8 8.0 mW/°C Derate Above 25°C 5.0 RθJC Thermal Resistance, Junction to Case 83.3 RθJA Thermal Resistance, Junction to Ambient 200 °C/W
357 125 °C/W Notes:
3. Device is mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch.
4. Device is mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm, mounting pad for the collector lead minimum 6 cm2. © 2002 Fairchild Semiconductor Corporation
2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0 www.fairchildsemi.com
2 2N3904 / MMBT3904 / PZT3904 — NPN General-Purpose Amplifier Absolute Maximum Ratings(1), (2)