Datasheet Si7611DN (Vishay) - 5
| Hersteller | Vishay |
| Beschreibung | P-Channel 40-V (D-S) MOSFET |
| Seiten / Seite | 13 / 5 — New Product. Si7611DN. TYPICAL CHARACTERISTICS. Current Derating*. Power, … |
| Dateiformat / Größe | PDF / 579 Kb |
| Dokumentensprache | Englisch |
New Product. Si7611DN. TYPICAL CHARACTERISTICS. Current Derating*. Power, Junction-to-Case. Power, Junction-to-Ambient
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Textversion des Dokuments
New Product Si7611DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 36 27 (A) Package Limited rrent u C 18 Drain - I D 9 0 0 25 50 75 100 125 150 TC - Case Temperature (°C)
Current Derating*
50 2.0 40 1.5 ) 30 (W (W er er 1.0 w w Po 20 Po 0.5 10 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) TA - Ambient Temperature (°C)
Power, Junction-to-Case Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 69939 www.vishay.com S-80895-Rev. B, 21-Apr-08 5
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 36 27 (A) Package Limited rrent u C 18 Drain - I D 9 0 0 25 50 75 100 125 150 TC - Case Temperature (°C)
Current Derating*
50 2.0 40 1.5 ) 30 (W (W er er 1.0 w w Po 20 Po 0.5 10 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) TA - Ambient Temperature (°C)
Power, Junction-to-Case Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 69939 www.vishay.com S-80895-Rev. B, 21-Apr-08 5