Datasheet BSC093N04LS G - 7
| Beschreibung | OptiMOS 3 Power-Transistor |
| Seiten / Seite | 10 / 7 — BSC093N04LS G. 13 Avalanche characteristics. 14 Typ. gate charge. 100. … |
| Dateiformat / Größe | PDF / 533 Kb |
| Dokumentensprache | Englisch |
BSC093N04LS G. 13 Avalanche characteristics. 14 Typ. gate charge. 100. [V]. GSV. 0.1. 1000. [µs]. [nC]. gate
Textversion des Dokuments
BSC093N04LS G 13 Avalanche characteristics 14 Typ. gate charge
I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=30 A pulsed parameter: T j(start) parameter: V DD
100 12
20 V
10
8 V 32 V
8
25 °C
]
100 °C
[A 10 [V] 6
125 °C
I AV GSV 4 2 1 0 0.1 1 10 100 1000 0 4 8 12 16 20 t [µs] Q [nC] AV gate 15 Drain-source breakdown voltage 16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
45 V
GS Q g
40 35 [V] )S DS( BRV 30
V gs(th)
25
Q g(th) Q sw
Q gate
Q Q
20
gs gd
-60 -20 20 60 100 140 180 T [°C] j
Rev. 2.1 page 7 2013-05-21
I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=30 A pulsed parameter: T j(start) parameter: V DD
100 12
20 V
10
8 V 32 V
8
25 °C
]
100 °C
[A 10 [V] 6
125 °C
I AV GSV 4 2 1 0 0.1 1 10 100 1000 0 4 8 12 16 20 t [µs] Q [nC] AV gate 15 Drain-source breakdown voltage 16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
45 V
GS Q g
40 35 [V] )S DS( BRV 30
V gs(th)
25
Q g(th) Q sw
Q gate
Q Q
20
gs gd
-60 -20 20 60 100 140 180 T [°C] j
Rev. 2.1 page 7 2013-05-21