Datasheet BSC093N04LS G - 4
| Beschreibung | OptiMOS 3 Power-Transistor |
| Seiten / Seite | 10 / 4 — BSC093N04LS G. 1 Power dissipation. 2 Drain current. otP. 120. 160. [°C]. … |
| Dateiformat / Größe | PDF / 533 Kb |
| Dokumentensprache | Englisch |
BSC093N04LS G. 1 Power dissipation. 2 Drain current. otP. 120. 160. [°C]. 3 Safe operating area. 4 Max. transient thermal impedance. 103
Textversion des Dokuments
BSC093N04LS G 1 Power dissipation 2 Drain current
P ≥10 V tot=f(T C) I D=f(T C); V GS
40 50 35 40 30 25 30 ] ] [W 20 t [A otP I D 20 15 10 10 5 0 0 0 40 80 120 160 0 40 80 120 160 T [°C] T [°C] C C 3 Safe operating area 4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T
103 10
limited by on-state resistance 1 µs
102
0.5 10 µs
1
0.2 100 µs
]
0.1
]
DC
[A 101 [K/W
0.05
I D C J ht
0.02
Z
1 ms 0.01
0.1
10 ms single pulse
100 10-1 0.01 0 0 0 0 0 0 1 10-1 100 101 102 10-6 10-5 10-4 10-3 10-2 10-1 100 V [V] t [s] DS p
Rev. 2.1 page 4 2013-05-21
P ≥10 V tot=f(T C) I D=f(T C); V GS
40 50 35 40 30 25 30 ] ] [W 20 t [A otP I D 20 15 10 10 5 0 0 0 40 80 120 160 0 40 80 120 160 T [°C] T [°C] C C 3 Safe operating area 4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T
103 10
limited by on-state resistance 1 µs
102
0.5 10 µs
1
0.2 100 µs
]
0.1
]
DC
[A 101 [K/W
0.05
I D C J ht
0.02
Z
1 ms 0.01
0.1
10 ms single pulse
100 10-1 0.01 0 0 0 0 0 0 1 10-1 100 101 102 10-6 10-5 10-4 10-3 10-2 10-1 100 V [V] t [s] DS p
Rev. 2.1 page 4 2013-05-21