Datasheet NTD4815NH (ON Semiconductor)
| Hersteller | ON Semiconductor |
| Beschreibung | Power MOSFET 30 V, 35 A, Single N-Channel, DPAK/IPAK |
| Seiten / Seite | 8 / 1 — 30 V, 35 A, Single N- Channel, DPAK/IPAK. Features. http://onsemi.com. … |
| Dateiformat / Größe | PDF / 297 Kb |
| Dokumentensprache | Englisch |
30 V, 35 A, Single N- Channel, DPAK/IPAK. Features. http://onsemi.com. V(BR)DSS. RDS(ON) MAX. ID MAX. Applications. MAXIMUM RATINGS
Textversion des Dokuments
NTD4815NH Power MOSFET
30 V, 35 A, Single N- Channel, DPAK/IPAK Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses
http://onsemi.com
• Optimized Gate Charge to Minimize Switching Losses • Low RG
V(BR)DSS RDS(ON) MAX ID MAX
• These are Pb- Free Devices 15 mΩ @ 10 V
Applications
30 V 35 A 27.7 mΩ @ 4.5 V • CPU Power Delivery • DC- DC Converters D • High Side Switching
MAXIMUM RATINGS
(TJ = 25°C unless otherwise stated) G
Parameter Symbol Value Unit
Drain- to- Source Voltage VDSS 30 V S Gate- to- Source Voltage VGS ±20 V
N- CHANNEL MOSFET
Continuous Drain TA = 25°C ID 8.5 A Current R 4 θJA 4 (Note 1) TA = 85°C 6.5 4 Power Dissipation TA = 25°C PD 1.92 W RθJA (Note 1) 1 2 1 Continuous Drain T 3 1 A = 25°C ID 6.9 A 2 3 Current R 2 θJA 3 (Note 2) Steady TA = 85°C 5.3
DPAK 3 IPAK IPAK
State Power Dissipation T
CASE 369AA CASE 369AC CASE 369D
A = 25°C PD 1.26 W R
(Bent Lead) (Straight Lead) (Straight Lead
θJA (Note 2)
STYLE 2 DPAK)
Continuous Drain TC = 25°C ID 35 A Current RθJC (Note 1) TC = 85°C 27
MARKING DIAGRAMS
Power Dissipation T
& PIN ASSIGNMENTS
C = 25°C PD 32.6 W RθJC (Note 1) 4 4 Pulsed Drain t 4 Drain Drain p=10ms TA = 25°C IDM 87 A Current Drain Current Limited by Package TA = 25°C IDmaxPkg 35 A 48 48 Operating Junction and Storage TJ, - 55 to °C 48 YWW YWW 15NHG YWW 15NHG Temperature TSTG +175 15NHG Source Current (Body Diode) IS 27 A 2 Drain to Source dV/dt dV/dt 6 V/ns 1 Drain 3 1 2 3 Gate Source Gate Drain Source Single Pulse Drain- to- Source Avalanche EAS 35.6 mJ 1 2 3 Gate Drain Source Energy (VDD = 24 V, VGS = 10 V, IL = 15.4 Apk, L = 0.3 mH, RG = 25 Ω) Y = Year Lead Temperature for Soldering Purposes TL 260 °C WW = Work Week (1/8” from case for 10 s) 4815NH= Device Code Stresses exceeding Maximum Ratings may damage the device. Maximum G = Pb- Free Package Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the
ORDERING INFORMATION
Recommended Operating Conditions may affect device reliability. Seedetailedorderingandshippinginformationinthepackage dimensions section on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
June, 2010 - Rev. 3 NTD4815NH/D
30 V, 35 A, Single N- Channel, DPAK/IPAK Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses
http://onsemi.com
• Optimized Gate Charge to Minimize Switching Losses • Low RG
V(BR)DSS RDS(ON) MAX ID MAX
• These are Pb- Free Devices 15 mΩ @ 10 V
Applications
30 V 35 A 27.7 mΩ @ 4.5 V • CPU Power Delivery • DC- DC Converters D • High Side Switching
MAXIMUM RATINGS
(TJ = 25°C unless otherwise stated) G
Parameter Symbol Value Unit
Drain- to- Source Voltage VDSS 30 V S Gate- to- Source Voltage VGS ±20 V
N- CHANNEL MOSFET
Continuous Drain TA = 25°C ID 8.5 A Current R 4 θJA 4 (Note 1) TA = 85°C 6.5 4 Power Dissipation TA = 25°C PD 1.92 W RθJA (Note 1) 1 2 1 Continuous Drain T 3 1 A = 25°C ID 6.9 A 2 3 Current R 2 θJA 3 (Note 2) Steady TA = 85°C 5.3
DPAK 3 IPAK IPAK
State Power Dissipation T
CASE 369AA CASE 369AC CASE 369D
A = 25°C PD 1.26 W R
(Bent Lead) (Straight Lead) (Straight Lead
θJA (Note 2)
STYLE 2 DPAK)
Continuous Drain TC = 25°C ID 35 A Current RθJC (Note 1) TC = 85°C 27
MARKING DIAGRAMS
Power Dissipation T
& PIN ASSIGNMENTS
C = 25°C PD 32.6 W RθJC (Note 1) 4 4 Pulsed Drain t 4 Drain Drain p=10ms TA = 25°C IDM 87 A Current Drain Current Limited by Package TA = 25°C IDmaxPkg 35 A 48 48 Operating Junction and Storage TJ, - 55 to °C 48 YWW YWW 15NHG YWW 15NHG Temperature TSTG +175 15NHG Source Current (Body Diode) IS 27 A 2 Drain to Source dV/dt dV/dt 6 V/ns 1 Drain 3 1 2 3 Gate Source Gate Drain Source Single Pulse Drain- to- Source Avalanche EAS 35.6 mJ 1 2 3 Gate Drain Source Energy (VDD = 24 V, VGS = 10 V, IL = 15.4 Apk, L = 0.3 mH, RG = 25 Ω) Y = Year Lead Temperature for Soldering Purposes TL 260 °C WW = Work Week (1/8” from case for 10 s) 4815NH= Device Code Stresses exceeding Maximum Ratings may damage the device. Maximum G = Pb- Free Package Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the
ORDERING INFORMATION
Recommended Operating Conditions may affect device reliability. Seedetailedorderingandshippinginformationinthepackage dimensions section on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
June, 2010 - Rev. 3 NTD4815NH/D