Datasheet IRF5305 - 5
| Beschreibung | HEXFET Power MOSFET |
| Seiten / Seite | 9 / 5 — Fig 10a. Fig 9. Fig 10b. Fig 11 |
| Dateiformat / Größe | PDF / 133 Kb |
| Dokumentensprache | Englisch |
Fig 10a. Fig 9. Fig 10b. Fig 11
Textversion des Dokuments
IRF5305 RD VDS 35 VGS D.U.T. 30 RG - + VDD 25 -10V Pulse Width ≤ 1 µs 20 Duty Factor ≤ 0.1 % 15
Fig 10a.
Switching Time Test Circuit D 10 -I , Drain Current (A) td(on) tr td(off) tf VGS 5 10% 0 25 50 75 100 125 150 175 T , Case Temperature ( C) ° C 90% VDS
Fig 9.
Maximum Drain Current Vs.
Fig 10b.
Switching Time Waveforms Case Temperature 10 thJC (Z ) 1 D = 0.50 0.20 0.10 PDM 0.1 0.05 t1 0.02 SINGLE PULSE 0.01 t (THERMAL RESPONSE) 2 Thermal Response Notes: 1. Duty factor D = t / t 1 2 2. Peak T = P x Z + T J DM thJC C 0.01 0.00001 0.0001 0.001 0.01 0.1 t , Rectangular Pulse Duration (sec) 1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5
Fig 10a.
Switching Time Test Circuit D 10 -I , Drain Current (A) td(on) tr td(off) tf VGS 5 10% 0 25 50 75 100 125 150 175 T , Case Temperature ( C) ° C 90% VDS
Fig 9.
Maximum Drain Current Vs.
Fig 10b.
Switching Time Waveforms Case Temperature 10 thJC (Z ) 1 D = 0.50 0.20 0.10 PDM 0.1 0.05 t1 0.02 SINGLE PULSE 0.01 t (THERMAL RESPONSE) 2 Thermal Response Notes: 1. Duty factor D = t / t 1 2 2. Peak T = P x Z + T J DM thJC C 0.01 0.00001 0.0001 0.001 0.01 0.1 t , Rectangular Pulse Duration (sec) 1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5