EPC2103 – Enhancement-Mode GaN Power Transistor Half BridgePreliminary Specification SheetFigure 9a:Figure 9b:EPC2103-Q1: Normalized Threshold Voltage vs. TemperatureEPC2103-Q2: Normalized Threshold Voltage vs. Temperature1.41.41.3ge1.3getataol 1.2olVI1.2D = 7 mAVID = 7 mAdd1.11.1holholssee11hrhrTTd 0.9de0.9elizliza 0.8a 0.8mmoror0.7N0.7N0.60.6-250255075100125150175-250255075100125150175TJ - Junction Temperature (°C)TJ - Junction Temperature (°C) Subject to Change without Notice www.epc-co.com COPYRIGHT 2015 Page 7