Preliminary Datasheet EPC2103 (Efficient Power Conversion) - 4

EPC2103 – Enhancement-Mode GaN Power Transistor Half Bridge Preliminary Specification Sheet Figure 1a: EPC2103-Q1 Typical Output Characteristics at 25°C Figure 1b: EPC2103-Q2 Typical Output Characteristics at 25°C 160 160 ) ) A A t ( t ( n 120 n 120 rre rre u u C
VG V S = GS = 5 5 V V
C
VG V S = GS = 5 5 V V
in 80 in 80 ra
VG V S = GS = 4 4 V V
ra
VG V S = GS = 4 4 V V
D D - - I D
V = 3 V V = 3 V
40
VGS = GS 3 V
I D 40
VGS = GS 3 V VG V S = GS = 2 2 V V VG V S = GS = 2 2 V V
0 0 0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3 VDS - Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Figure 2a: EPC2103-Q1 Transfer Characteristics Figure 2b: EPC2103-Q2 Transfer Characteristics
25 °C 25 °C
160
125 °C
160
125 °C
) ) A A t ( V t ( V n DS = 3 V n DS = 3 V 120 120 rre rre u u C C in 80 in 80 ra ra D D - - I D I D 40 40 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Figure 3a: EPC2103-Q1: RDS(on) vs. VGS for Various Drain Currents Figure 3b: EPC2103-Q2: RDS(on) vs. VGS for Various Drain Currents 16 16 Ω) Ω) 14 m 14 m (
ID I =10 A D = 10 A
(
ID I =10 A D = 10 A
ce 12 ce
I = 20 A
12
I = 20 A
an
ID D=20 A
an
ID D=20 A
st 10 st
ID I
10
D=30 = A 30 A ID I D=30 = A 30 A
esi esi R R 8 e
ID I
8
D=40 = A 40 A
e
ID I D=40 = A 40 A
tat tat 6 -S 6 -S -On 4 -On 4 ) ) n n (o (o S 2 S D 2 D R R 0 0 2.5 3 3.5 4 4.5 5 2.5 3 3.5 4 4.5 5 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
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