Preliminary Datasheet EPC2102 (Efficient Power Conversion) - 9
| Hersteller | Efficient Power Conversion |
| Beschreibung | Enhancement-Mode GaN Power Transistor Half Bridge |
| Seiten / Seite | 10 / 9 — EPC2102 – Enhancement-Mode GaN Power Transistor Half Bridge. Preliminary … |
| Dateiformat / Größe | PDF / 1.4 Mb |
| Dokumentensprache | Englisch |
EPC2102 – Enhancement-Mode GaN Power Transistor Half Bridge. Preliminary Specification Sheet. RECOMMENDED LAND PATTERN
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EPC2102
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EPC2102 – Enhancement-Mode GaN Power Transistor Half Bridge Preliminary Specification Sheet RECOMMENDED LAND PATTERN
(Units in µm)
RECOMMENDED STENCIL DESIGN
(Units in µm) Recommended stencil should be 4mil (100µm) thick, must be laser cut, openings per drawing. Intended for use with SAC305 Type 4 solder, reference 88.5% metals content Additional assembly resources available at
http://epc-co.com/epc/DesignSupport/AssemblyBasics.aspx
Subject to Change without Notice www.epc-co.com COPYRIGHT 2015 Page 9
(Units in µm)
RECOMMENDED STENCIL DESIGN
(Units in µm) Recommended stencil should be 4mil (100µm) thick, must be laser cut, openings per drawing. Intended for use with SAC305 Type 4 solder, reference 88.5% metals content Additional assembly resources available at
http://epc-co.com/epc/DesignSupport/AssemblyBasics.aspx
Subject to Change without Notice www.epc-co.com COPYRIGHT 2015 Page 9