Preliminary Datasheet EPC2102 (Efficient Power Conversion) - 4

EPC2102 – Enhancement-Mode GaN Power Transistor Half Bridge Preliminary Specification Sheet Figure 1a: EPC2102-Q1 Typical Output Characteristics at 25°C Figure 1b: EPC2102-Q2 Typical Output Characteristics at 25°C 200
VG
200
V S = 5 V VG V S = 5 V GS = 5 V GS = 5 V VG V S = GS = 4 4 V V VG V S = GS = 4 4 V V
) 160 ) 160 A A t (
VG V S = 3 V GS = 3 V
t (
VG V S = 3 V GS = 3 V
n n 120 rre
VG V S = GS = 2 2 V V
120 rre
VG V S = GS = 2 2 V V
u u C C in in 80 ra 80 ra D D - - I D I D 40 40 0 0 0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3 VDS - Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Figure 2a: EPC2102-Q1 Transfer Characteristics Figure 2b: EPC2102-Q2 Transfer Characteristics 200 200 25 °C 25 °C 125 °C 125 °C ) ) A 160 A 160 t ( V t ( V n DS = 3 V n DS = 3 V rre 120 rre u 120 u C C in in ra 80 ra 80 D D - - I D I D 40 40 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Figure 3a: EPC2102-Q1: RDS(on) vs. VGS for Various Drain Currents Figure 3b: EPC2102-Q2: RDS(on) vs. VGS for Various Drain Currents 12 12 Ω) Ω) m 10 m (
ID I = 10 A D = 10 A
10 (
ID I = 10 A D = 10 A
ce ce
I = 20 A I = 20 A
an
ID = D 20 A
an
ID = D 20 A
8 st 8 st
ID I = D 30 = A 30 A ID I = D 30 = A 30 A
esi esi R R 6 e
ID I =
6
D 40 = A 40 A
e
ID I = D 40 = A 40 A
tat tat -S 4 -S 4 -On -On ) ) n n (o 2 (o 2 S S D D R R 0 0 2.5 3 3.5 4 4.5 5 2.5 3 3.5 4 4.5 5 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
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