Datasheet IGC033S101 (Infineon) - 6
| Hersteller | Infineon |
| Beschreibung | The IGC033S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs |
| Seiten / Seite | 18 / 6 — Public. IGC033S101. 4 Electrical Characteristics. … |
| Revision | 01_00 |
| Dateiformat / Größe | PDF / 1.2 Mb |
| Dokumentensprache | Englisch |
Public. IGC033S101. 4 Electrical Characteristics. Table 5 Static characteristics
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Public
CoolGaNT MTransistor 100 V G3
IGC033S101 4 Electrical Characteristics
at Tj=25 °C, unless otherwise specified
Table 5 Static characteristics
Values Parameter Symbol Unit Note / Test condition Min. Typ. Max. Gate threshold voltage VGS(th) 1.2 1.9 2.9 V VDS=VGS, I =8.0 mA D 0.3 1.5 VDS=100 V, VGS=0 V, Tj=25 °C Drain‑source leakage current IDSS ‑ μA 6.0 50 VDS=100 V, VGS=0 V, Tj=125 °C 16 250 VGS=5 V, Tj=25 °C 0.01 0.1 VGS=‑4 V, Tj=25 °C Gate‑source leakage current IGSS ‑ μA 120 1100 VGS=5 V, Tj=125 °C 0.01 0.1 VGS=‑4 V, Tj=125 °C Drain‑source on‑state resistance RDS(on) ‑ 2.4 3.3 mΩ VGS=5 V, I =20 A D Gate resistance 4) RG ‑ 0.5 ‑ Ω ‑ 4) Defined by design. Not subject to production test.
Table 6 Capacitance characteristics
5) Values Parameter Symbol Unit Note / Test condition Min. Typ. Max. Input capacitance Ciss 1200 1400 Output capacitance Coss ‑ 540 590 pF VGS=0 V, VDS=50 V, f=1 MHz Reverse transfer capacitance Crss 6.1 8.0 5) Defined by design. Not subject to production test.
Table 7 Gate charge characteristics
Values Parameter Symbol Unit Note / Test condition Min. Typ. Max. Gate to source charge Qgs 2.8 ‑ nC Gate charge at threshold Qg(th) 2.1 ‑ nC Gate to drain charge 6) Qgd 2.6 ‑ nC ‑ VDS=50 V, I =20 A, D VGS=0 to 5 V Switching charge Qsw 3.3 ‑ nC Gate charge total 6) Qg 11 14 nC Gate plateau voltage Vplateau 2.6 ‑ V Output charge 6) Qoss ‑ 43 47 nC VDS=50 V, VGS=0 V 6) Defined by design. Not subject to production test. Datasheet Revision 1.2 https://www.infineon.com 6 2025‑04‑22 Document Outline Description Maximum ratings Recommended operating conditions Thermal characteristics Electrical Characteristics Electrical characteristics diagrams Package outlines Appendix A Revision history Trademarks Disclaimer
Public
CoolGaNT MTransistor 100 V G3
IGC033S101 4 Electrical Characteristics
at Tj=25 °C, unless otherwise specified
Table 5 Static characteristics
Values Parameter Symbol Unit Note / Test condition Min. Typ. Max. Gate threshold voltage VGS(th) 1.2 1.9 2.9 V VDS=VGS, I =8.0 mA D 0.3 1.5 VDS=100 V, VGS=0 V, Tj=25 °C Drain‑source leakage current IDSS ‑ μA 6.0 50 VDS=100 V, VGS=0 V, Tj=125 °C 16 250 VGS=5 V, Tj=25 °C 0.01 0.1 VGS=‑4 V, Tj=25 °C Gate‑source leakage current IGSS ‑ μA 120 1100 VGS=5 V, Tj=125 °C 0.01 0.1 VGS=‑4 V, Tj=125 °C Drain‑source on‑state resistance RDS(on) ‑ 2.4 3.3 mΩ VGS=5 V, I =20 A D Gate resistance 4) RG ‑ 0.5 ‑ Ω ‑ 4) Defined by design. Not subject to production test.
Table 6 Capacitance characteristics
5) Values Parameter Symbol Unit Note / Test condition Min. Typ. Max. Input capacitance Ciss 1200 1400 Output capacitance Coss ‑ 540 590 pF VGS=0 V, VDS=50 V, f=1 MHz Reverse transfer capacitance Crss 6.1 8.0 5) Defined by design. Not subject to production test.
Table 7 Gate charge characteristics
Values Parameter Symbol Unit Note / Test condition Min. Typ. Max. Gate to source charge Qgs 2.8 ‑ nC Gate charge at threshold Qg(th) 2.1 ‑ nC Gate to drain charge 6) Qgd 2.6 ‑ nC ‑ VDS=50 V, I =20 A, D VGS=0 to 5 V Switching charge Qsw 3.3 ‑ nC Gate charge total 6) Qg 11 14 nC Gate plateau voltage Vplateau 2.6 ‑ V Output charge 6) Qoss ‑ 43 47 nC VDS=50 V, VGS=0 V 6) Defined by design. Not subject to production test. Datasheet Revision 1.2 https://www.infineon.com 6 2025‑04‑22 Document Outline Description Maximum ratings Recommended operating conditions Thermal characteristics Electrical Characteristics Electrical characteristics diagrams Package outlines Appendix A Revision history Trademarks Disclaimer