Datasheet PN4391, PN4392, PN4393 (Central Semiconductor)
| Hersteller | Central Semiconductor |
| Beschreibung | Silicon N-Channel JFETS |
| Seiten / Seite | 3 / 1 — PN4391. PN4392. PN4393. www.centra lsemi.com. SILICON. DESCRIPTION:. … |
| Dateiformat / Größe | PDF / 323 Kb |
| Dokumentensprache | Englisch |
PN4391. PN4392. PN4393. www.centra lsemi.com. SILICON. DESCRIPTION:. N-CHANNEL JFETS. MARKING: FULL PART NUMBER. TO-92 CASE
Modelllinie für dieses Datenblatt
Textversion des Dokuments
PN4391 PN4392 PN4393 www.centra lsemi.com SILICON DESCRIPTION: N-CHANNEL JFETS
The CENTRAL SEMICONDUCTOR PN4391 series devices are N-Channel silicon JFETs designed for analog switching and chopper applications.
MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS:
(TA=25°C)
SYMBOL UNITS
Gate-Drain Voltage VGD 40 V Gate-Source Voltage VGS 40 V Gate Current IG 50 mA Power Dissipation PD 625 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
PN4391 PN4392 PN4393 SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS
IGSS VGS=20V - 0.1 - 0.1 - 0.1 nA IGSS VGS=20V, TA=100°C - 0.2 - 0.2 - 0.2 µA IDSS VDS=20V 50 150 25 75 5.0 30 mA ID(OFF) VDS=20V, VGS=12V - 0.1 - - - - nA ID(OFF) VDS=20V, VGS=7.0V - - - 0.1 - - nA ID(OFF) VDS=20V, VGS=5.0V - - - - - 0.1 nA ID(OFF) VDS=20V, VGS=12V, TA=100°C - 0.2 - - - - µA ID(OFF) VDS=20V, VGS=7.0V, TA=100°C - - - 0.2 - - µA ID(OFF) VDS=20V, VGS=5.0V, TA=100°C - - - - - 0.2 µA BVGSS IG=1.0µA 40 - 40 40 - V VGS(OFF) VDS=20V, ID=1.0nA 4.0 10 2.0 5.0 0.5 3.0 V VGS(f) VDS=0, IG=1.0mA - 1.0 - 1.0 - 1.0 V VDS(ON) ID=12mA - 0.4 - - - - V VDS(ON) ID=6.0mA - - - 0.4 - - V VDS(ON) ID=3.0mA - - - - - 0.4 V rDS(ON) ID=1.0mA, VGS=0 - 30 - 60 - 100 Ω rds(on) VGS=0, ID=0, f=1.0kHz - 30 - 60 - 100 Ω Crss VGS=12V, VDS=0, f=1.0MHz - 4.0 - - - - pF Crss VGS=7.0V, VDS=0, f=1.0MHz - - - 4.0 - - pF Crss VGS=5.0V, VDS=0, f=1.0MHz - - - - - 4.0 pF Ciss VDS=20V, VGS=0, f=1.0MHz - 14 - 14 - 14 pF R5 (18-August 2022)
The CENTRAL SEMICONDUCTOR PN4391 series devices are N-Channel silicon JFETs designed for analog switching and chopper applications.
MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS:
(TA=25°C)
SYMBOL UNITS
Gate-Drain Voltage VGD 40 V Gate-Source Voltage VGS 40 V Gate Current IG 50 mA Power Dissipation PD 625 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
PN4391 PN4392 PN4393 SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS
IGSS VGS=20V - 0.1 - 0.1 - 0.1 nA IGSS VGS=20V, TA=100°C - 0.2 - 0.2 - 0.2 µA IDSS VDS=20V 50 150 25 75 5.0 30 mA ID(OFF) VDS=20V, VGS=12V - 0.1 - - - - nA ID(OFF) VDS=20V, VGS=7.0V - - - 0.1 - - nA ID(OFF) VDS=20V, VGS=5.0V - - - - - 0.1 nA ID(OFF) VDS=20V, VGS=12V, TA=100°C - 0.2 - - - - µA ID(OFF) VDS=20V, VGS=7.0V, TA=100°C - - - 0.2 - - µA ID(OFF) VDS=20V, VGS=5.0V, TA=100°C - - - - - 0.2 µA BVGSS IG=1.0µA 40 - 40 40 - V VGS(OFF) VDS=20V, ID=1.0nA 4.0 10 2.0 5.0 0.5 3.0 V VGS(f) VDS=0, IG=1.0mA - 1.0 - 1.0 - 1.0 V VDS(ON) ID=12mA - 0.4 - - - - V VDS(ON) ID=6.0mA - - - 0.4 - - V VDS(ON) ID=3.0mA - - - - - 0.4 V rDS(ON) ID=1.0mA, VGS=0 - 30 - 60 - 100 Ω rds(on) VGS=0, ID=0, f=1.0kHz - 30 - 60 - 100 Ω Crss VGS=12V, VDS=0, f=1.0MHz - 4.0 - - - - pF Crss VGS=7.0V, VDS=0, f=1.0MHz - - - 4.0 - - pF Crss VGS=5.0V, VDS=0, f=1.0MHz - - - - - 4.0 pF Ciss VDS=20V, VGS=0, f=1.0MHz - 14 - 14 - 14 pF R5 (18-August 2022)