Datasheet BSS308PE (Infineon)
| Hersteller | Infineon |
| Beschreibung | OptiMOS P3 Small-Signal-Transistor |
| Seiten / Seite | 9 / 1 — BSS308PE. OptiMOS™ P3 Small-Signal-Transistor. Product Summary. Features. … |
| Revision | 02_03 |
| Dateiformat / Größe | PDF / 246 Kb |
| Dokumentensprache | Englisch |
BSS308PE. OptiMOS™ P3 Small-Signal-Transistor. Product Summary. Features. Type. Package. Tape and Reel Information. Marking. Lead Free
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BSS308PE OptiMOS™ P3 Small-Signal-Transistor Product Summary Features
V DS 30 V • P-channel R DS(on),max V GS=-10 V 80 mΩ • Enhancement mode V GS=-4.5 V 130 • Logic level (4.5V rated) I D -2.0 A • ESD protected PG-SOT-23 • Qualified according to AEC Q101 3 • 100% lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21 1 2
Type Package Tape and Reel Information Marking Lead Free Packing
BSS308PE PG-SOT23 H6327: 3000 pcs/ reel YFs Yes Non dry
Maximum ratings,
at T j=25 °C, unless otherwise specified
Parameter Symbol Conditions Value Unit
Continuous drain current I D T A=25 °C -2.0 A T A=70 °C -1.6 Pulsed drain current I D,pulse T A=25 °C -8.0 Avalanche energy, single pulse E AS I D=-2 A, R GS=25 Ω -10.7 mJ I D=-2 A, V Reverse diode d DS=-16V, v /dt dv /dt 6 kV/µs di /dt =-200A/µs, T j,max=150 °C Gate source voltage V GS ±20 V Power dissipation1) P tot T A=25 °C 0.5 W Operating and storage temperature T j, T stg -55 ... 150 °C ESD Class JESD22-A114 -HBM 2 (2kV to 4kV) Soldering Temperature 260 °C °C IEC climatic category; DIN IEC 68-1 55/150/56 °C Rev 2.03 page 1 2011-07-08
V DS 30 V • P-channel R DS(on),max V GS=-10 V 80 mΩ • Enhancement mode V GS=-4.5 V 130 • Logic level (4.5V rated) I D -2.0 A • ESD protected PG-SOT-23 • Qualified according to AEC Q101 3 • 100% lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21 1 2
Type Package Tape and Reel Information Marking Lead Free Packing
BSS308PE PG-SOT23 H6327: 3000 pcs/ reel YFs Yes Non dry
Maximum ratings,
at T j=25 °C, unless otherwise specified
Parameter Symbol Conditions Value Unit
Continuous drain current I D T A=25 °C -2.0 A T A=70 °C -1.6 Pulsed drain current I D,pulse T A=25 °C -8.0 Avalanche energy, single pulse E AS I D=-2 A, R GS=25 Ω -10.7 mJ I D=-2 A, V Reverse diode d DS=-16V, v /dt dv /dt 6 kV/µs di /dt =-200A/µs, T j,max=150 °C Gate source voltage V GS ±20 V Power dissipation1) P tot T A=25 °C 0.5 W Operating and storage temperature T j, T stg -55 ... 150 °C ESD Class JESD22-A114 -HBM 2 (2kV to 4kV) Soldering Temperature 260 °C °C IEC climatic category; DIN IEC 68-1 55/150/56 °C Rev 2.03 page 1 2011-07-08