Datasheet FL7740 (ON Semiconductor) - 4

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FL7740 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Ratings Units
VHV(MAX) HV Pin Voltage Range 560 V VMV(MAX) VDD, GATE Pin Voltage Range −0.3 to 30 V VLV(MAX) COMV, PF, BIAS, VS, CS Pin Voltage Range −0.3 to 6 V VLV(PULSE) VS, CS Pin Negative Pulse Voltage at ILV < 0.2 A and tPULSE < −1.5 V 300 ns PD(MAX) Maximum Power Dissipation (TA < 50°C) 663 mW TJ(max) Maximum Junction Temperature 150 °C TSTG Storage Temperature Range −55 to 150 °C RJA Junction−to−Ambient Thermal Impedance 158 °C/W RJC Junction−to−Case Thermal Impedance 39 °C/W ESDHBM ESD Capability, Human Body Model (Note 2) 2 kV ESDCDM ESD Capability, Charged Device Model (Note 2) 2 kV Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters. 2. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per AEC−Q100−002 (EIA/JESD22−A114) ESD Machine Model tested per AEC−Q100−003 (EIA/JESD22−A115) Latchup Current Maximum Rating: ≤150 mA per JEDEC standard: JESD78
RECOMMENDED OPERATING RANGES Symbol Parameter Min Max Unit
TA Ambient Temperature −40 125 °C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability.
ELECTRICAL CHARACTERISTICS
VDD = 18 V and TJ = −40 ~ 125°C unless otherwise specified
Symbol Parameter Test Conditions Min Typ Max Unit VDD Section
VDD−ON Turn−On Threshold Voltage 14.5 16.0 17.5 V VDD−OFF Turn−Off Threshold Voltage 6.75 7.75 8.75 V IDD−OP Operating Current CLOAD = 1 nF, VDD = 18V 3 5 6.5 mA IDD−AR Operating Current during Auto Restart 0.3 1 mA VDD−OVP VDD Over−Voltage−Protection 24 25 26 V VBIAS VBIAS Voltage 4.85 5.00 5.15 V
GATE Section
VOL Output Voltage Low 0.2 V VOH Output Voltage High VDD = 18 V 17.8 V Isource Peak Sourcing Current Design guaranteed mA 180 CLOAD = 1 nF, VDD = 20 V 210 CLOAD = 1 nF, VDD = 23 V Isink Peak Sinking Current Design guaranteed mA CLOAD = 1 nF, VDD = 20 V 385 CLOAD = 1 nF, VDD = 23 V 435 tr Rising Time CLOAD = 1 nF 110 150 190 ns tf Falling Time CLOAD = 1 nF 40 60 80 ns
HW Section
IHV Supply Current From HV Pin VHV = 560 V, VDD = 0 V 3 9 mA
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