Datasheet BLF881 (Ampleon)
| Hersteller | Ampleon |
| Beschreibung | UHF power LDMOS transistor |
| Seiten / Seite | 18 / 1 — BLF881; BLF881S UHF power LDMOS transistor Rev. 4 — 1 September 2015. … |
| Dateiformat / Größe | PDF / 1.3 Mb |
| Dokumentensprache | Englisch |
BLF881; BLF881S UHF power LDMOS transistor Rev. 4 — 1 September 2015. Product data sheet. 1. Product profile
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BLF881; BLF881S UHF power LDMOS transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description
A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications.
Table 1. Typical performance
RF performance at VDS = 50 V in a common-source 860 MHz test circuit.
Mode of operation f PL PL(PEP) PL(AV) Gp
D IMD3 IMDshldr (MHz) (W) (W) (W) (dB) (%) (dBc) (dBc)
2-tone, class AB f1 = 860; f2 = 860.1 - 140 - 21 49 34 - DVB-T (8k OFDM) 858 - - 33 21 34 - 33[1] [1] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features and benefits
2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 0.5 A: Peak envelope power load power = 140 W Power gain = 21 dB Drain efficiency = 49 % Third order intermodulation distortion = 34 dBc DVB performance at 858 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 0.5 A: Average output power = 33 W Power gain = 21 dB Drain efficiency = 34 % Shoulder distance = 33 dBc (4.3 MHz from center frequency) Integrated ESD protection Excellent ruggedness High power gain Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Application information 7.1 Narrowband RF figures 7.1.1 CW 7.1.2 2-Tone 7.1.3 DVB-T 7.2 Broadband RF figures 7.2.1 DVB-T 7.3 Ruggedness in class-AB operation 7.4 Reliability 8. Test information 9. Package outline 10. Abbreviations 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Licenses 12.5 Trademarks 13. Contact information 14. Contents
BLF881; BLF881S UHF power LDMOS transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description
A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications.
Table 1. Typical performance
RF performance at VDS = 50 V in a common-source 860 MHz test circuit.
Mode of operation f PL PL(PEP) PL(AV) Gp
D IMD3 IMDshldr (MHz) (W) (W) (W) (dB) (%) (dBc) (dBc)
2-tone, class AB f1 = 860; f2 = 860.1 - 140 - 21 49 34 - DVB-T (8k OFDM) 858 - - 33 21 34 - 33[1] [1] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features and benefits
2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 0.5 A: Peak envelope power load power = 140 W Power gain = 21 dB Drain efficiency = 49 % Third order intermodulation distortion = 34 dBc DVB performance at 858 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 0.5 A: Average output power = 33 W Power gain = 21 dB Drain efficiency = 34 % Shoulder distance = 33 dBc (4.3 MHz from center frequency) Integrated ESD protection Excellent ruggedness High power gain Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Application information 7.1 Narrowband RF figures 7.1.1 CW 7.1.2 2-Tone 7.1.3 DVB-T 7.2 Broadband RF figures 7.2.1 DVB-T 7.3 Ruggedness in class-AB operation 7.4 Reliability 8. Test information 9. Package outline 10. Abbreviations 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Licenses 12.5 Trademarks 13. Contact information 14. Contents