Datasheet LM4051 (Analog Devices) - 5
| Hersteller | Analog Devices |
| Beschreibung | 50ppm/°C Precision Micropower Shunt Voltage References with Multiple Reverse Breakdown Voltages |
| Seiten / Seite | 14 / 5 — LM4050/LM4051. Electrical Characteristics—3.000V. PARAMETER. SYMBOL. … |
| Dateiformat / Größe | PDF / 2.2 Mb |
| Dokumentensprache | Englisch |
LM4050/LM4051. Electrical Characteristics—3.000V. PARAMETER. SYMBOL. CONDITIONS. MIN. TYP. MAX. UNITS. Electrical Characteristics—3.300V
Modelllinie für dieses Datenblatt
- LM4050AEM3-2.1+ LM4050AEM3-2.1+T LM4050AEM3-2.1/V+ LM4050AEM3-2.1/V+T LM4050AEM3-2.5+ LM4050AEM3-2.5+T LM4050AEM3-2.5/V+ LM4050AEM3-2.5/V+T LM4050AEM3-3.0+ LM4050AEM3-3.0+T LM4050AEM3-4.1+ LM4050AEM3-4.1+T LM4050AEM3-4.1/V+ LM4050AEM3-4.1/V+T LM4050AEM3-5.0+ LM4050AEM3-5.0+T LM4050AEM3-5.0/V+ LM4050AEM3-5.0/V+T LM4050AEX3-2.1+ LM4050AEX3-2.1+T LM4050AEX3-2.5+ LM4050AEX3-2.5+T LM4050AEX3-2.5/V+ LM4050AEX3-2.5/V+T LM4050AEX3-3.0+T LM4050AEX3-3.3+ LM4050AEX3-3.3+T LM4050AEX3-3.3/V+ LM4050AEX3-3.3/V+T LM4050AEX3-5.0+ LM4050AEX3-5.0+T LM4050BEM3-2.5+ LM4050BEM3-2.5+T LM4050BEM3-2.5/V+ LM4050BEM3-2.5/V+T LM4050BEM3-3.0+ LM4050BEM3-3.0+T LM4050BEM3-3.0/V+T LM4050BEM3-4.1+ LM4050BEM3-4.1+T LM4050BEM3-4.1/V+ LM4050BEM3-4.1/V+T LM4050BEM3-5.0+ LM4050BEM3-5.0+T LM4050BEX3-2.1+T LM4050BEX3-2.5+ LM4050BEX3-2.5+T LM4050BEX3-2.5/V+ LM4050BEX3-2.5/V+T LM4050BEX3-3.0+ LM4050BEX3-3.0+T LM4050BEX3-3.3+ LM4050BEX3-3.3+T LM4050BEX3-5.0+ LM4050BEX3-5.0+T LM4050CEM3-2.1+ LM4050CEM3-2.1+T LM4050CEM3-2.5+ LM4050CEM3-2.5+T LM4050CEM3-4.1+ LM4050CEM3-4.1+T LM4050CEM3-5.0+ LM4050CEM3-5.0+T LM4050CEM3-5.0/V+ LM4050CEM3-5.0/V+T LM4050CEX3-2.5+ LM4050CEX3-2.5+T LM4050CEX3-3.0+ LM4050CEX3-3.0+T LM4050CEX3-3.3+ LM4050CEX3-3.3+T LM4050CEX3-3.3/V+ LM4050CEX3-3.3/V+T LM4050CEX3-5.0+ LM4050CEX3-5.0+T
Textversion des Dokuments
LM4050/LM4051
50ppm/°C Precision Micropower Shunt Voltage References with Multiple Reverse Breakdown Voltages
Electrical Characteristics—3.000V
(IR = 100µA, TA = TMIN to TMAX, unless otherwise noted. Typical values are at TA = +25°C.) (Note 2)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
LM4050A (0.1%) 2.9970 3.0000 3.0030 Reverse Breakdown Voltage VR TA = +25°C LM4050B (0.2%) 2.9940 3.0000 3.0060 V LM4050C (0.5%) 2.9850 3.0000 3.0150 LM4050A ±3.0 ±18 Reverse Breakdown Voltage Tolerance (Note 3) VRTOL LM4050B ±6.0 ±21 mV LM4050C ±15 ±30 Minimum Operating Current IRMIN 45 67 µA Average Reverse Voltage IR = 10Ma ±20 Temperature Coefficient DVR/DT IR = 1mA ±15 ±50 ppm/°C (Notes 3, 4) IR = 100µA ±15 Reverse Breakdown Voltage IRMIN ≤ IR ≤ 1mA 0.3 1.0 Change with Operating mV Current Change 1mA ≤ IR ≤ 15mA 2.5 8.0 Reverse Dynamic IR = 1mA, f = 120Hz, LM4050A/B 0.3 0.8 Impedance (Note 4) ZR I Ω AC = 0.1IR LM4050C 0.3 0.9 Wideband Noise eN IR = 100µA, 10Hz ≤ f ≤ 10kHz 45 µVRMS Reverse Breakdown Voltage Long-Term Stability DVR T = 1000h 120 ppm
Electrical Characteristics—3.300V
(IR = 100µA, TA = TMIN to TMAX, unless otherwise noted. Typical values are at TA = +25°C.) (Note 2)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
LM4050A (0.1%) 3.2967 3.3000 3.3033 Reverse Breakdown Voltage VR TA = +25°C LM4050B (0.2%) 3.2934 3.3000 3.3066 V LM4050C (0.5%) 3.2835 3.3000 3.3165 LM4050A ±3.0 ±18 Reverse Breakdown Voltage Tolerance (Note 3) VRTOL LM4050B ±6.0 ±21 mV LM4050C ±15 ±30 Minimum Operating Current IRMIN 45 67 µA Average Reverse Voltage IR = 10mA ±20 Temperature Coefficient DVR/DT IR = 1mA ±15 ±50 ppm/°C (Notes 3, 4) IR = 100µA ±15 Reverse Breakdown Voltage IRMIN ≤ IR ≤ 1mA 0.3 1.0 Change with Operating mV Current Change 1mA ≤ IR ≤ 15mA 2.5 8.0 Reverse Dynamic IR = 1mA, f = 120Hz, LM4050A/B 0.3 0.8 Impedance (Note 4) ZR I Ω AC = 0.1IR LM4050C 0.3 0.9 Wideband Noise eN IR = 100µA, 10Hz ≤ f ≤ 10kHz 50 µVRMS Reverse Breakdown Voltage Long-Term Stability DVR T = 1000h 120 ppm www.analog.com Analog Devices │ 5
50ppm/°C Precision Micropower Shunt Voltage References with Multiple Reverse Breakdown Voltages
Electrical Characteristics—3.000V
(IR = 100µA, TA = TMIN to TMAX, unless otherwise noted. Typical values are at TA = +25°C.) (Note 2)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
LM4050A (0.1%) 2.9970 3.0000 3.0030 Reverse Breakdown Voltage VR TA = +25°C LM4050B (0.2%) 2.9940 3.0000 3.0060 V LM4050C (0.5%) 2.9850 3.0000 3.0150 LM4050A ±3.0 ±18 Reverse Breakdown Voltage Tolerance (Note 3) VRTOL LM4050B ±6.0 ±21 mV LM4050C ±15 ±30 Minimum Operating Current IRMIN 45 67 µA Average Reverse Voltage IR = 10Ma ±20 Temperature Coefficient DVR/DT IR = 1mA ±15 ±50 ppm/°C (Notes 3, 4) IR = 100µA ±15 Reverse Breakdown Voltage IRMIN ≤ IR ≤ 1mA 0.3 1.0 Change with Operating mV Current Change 1mA ≤ IR ≤ 15mA 2.5 8.0 Reverse Dynamic IR = 1mA, f = 120Hz, LM4050A/B 0.3 0.8 Impedance (Note 4) ZR I Ω AC = 0.1IR LM4050C 0.3 0.9 Wideband Noise eN IR = 100µA, 10Hz ≤ f ≤ 10kHz 45 µVRMS Reverse Breakdown Voltage Long-Term Stability DVR T = 1000h 120 ppm
Electrical Characteristics—3.300V
(IR = 100µA, TA = TMIN to TMAX, unless otherwise noted. Typical values are at TA = +25°C.) (Note 2)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
LM4050A (0.1%) 3.2967 3.3000 3.3033 Reverse Breakdown Voltage VR TA = +25°C LM4050B (0.2%) 3.2934 3.3000 3.3066 V LM4050C (0.5%) 3.2835 3.3000 3.3165 LM4050A ±3.0 ±18 Reverse Breakdown Voltage Tolerance (Note 3) VRTOL LM4050B ±6.0 ±21 mV LM4050C ±15 ±30 Minimum Operating Current IRMIN 45 67 µA Average Reverse Voltage IR = 10mA ±20 Temperature Coefficient DVR/DT IR = 1mA ±15 ±50 ppm/°C (Notes 3, 4) IR = 100µA ±15 Reverse Breakdown Voltage IRMIN ≤ IR ≤ 1mA 0.3 1.0 Change with Operating mV Current Change 1mA ≤ IR ≤ 15mA 2.5 8.0 Reverse Dynamic IR = 1mA, f = 120Hz, LM4050A/B 0.3 0.8 Impedance (Note 4) ZR I Ω AC = 0.1IR LM4050C 0.3 0.9 Wideband Noise eN IR = 100µA, 10Hz ≤ f ≤ 10kHz 50 µVRMS Reverse Breakdown Voltage Long-Term Stability DVR T = 1000h 120 ppm www.analog.com Analog Devices │ 5