Datasheet BAS40 (Taiwan Semiconductor) - 4

HerstellerTaiwan Semiconductor
Beschreibung200mA, Low VF SMD Schottky Barrier Diode
Seiten / Seite6 / 4 — BAS40. /. -04. /. -05. /. -06. Taiwan. Semiconductor. CHARACTERISTICS. …
Dateiformat / GrößePDF / 347 Kb
DokumentenspracheEnglisch

BAS40. /. -04. /. -05. /. -06. Taiwan. Semiconductor. CHARACTERISTICS. CURVES. (TA. =. 25°C. unless. otherwise. noted). Fig. 5. Typical. Total. Capacitance. VS

BAS40 / -04 / -05 / -06 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig 5 Typical Total Capacitance VS

Modelllinie für dieses Datenblatt

Textversion des Dokuments

BAS40 / -04 / -05 / -06 Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig. 5 Typical Total Capacitance VS. Fig.6 Typical Transient Thermal Reverse Voltage Characteristics 100 4 ) f=1.0MHz C/W o ce ( ce (pF) 10 acitan Impedan 2 1 Thermal Junction Cap Transient 0 0.1 0 5 10 15 20 0.01 0.1 1 10 100 Reverse Voltage (V) Pulse Duration (s) 4 Version: H2001