Datasheet IRFP22N60K (Vishay) - 4

IRFP22N60K
www.vishay.com Vishay Siliconix 100.0 25 ) A( 20 t n e T rr 10.0 J = 150°C ) u A C ( n 15 i a rrent r u D e n C sr rai e 10 v 1.0 , D e I D R , T D J = 25°C I S 5 VGS = 0V 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 25 50 75 100 125 150 V T SD, Source-toDrain Voltage (V) C, Case Temperature (° C)
Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 9 - Maximum Drain Current vs. Case Temperature
1000 RD OPERATION IN THIS AREA VDS LIMITED BY RDS(on) A V ( GS t 100 D.U.T. n e R r G r + u - V C DD e cru 10 100µsec 10 V o S- Pulse width ≤ 1 µs ot- Duty factor ≤ 0.1 % ni ar 1msec D 1
Fig. 10a - Switching Time Test Circuit
, I D Tc = 25°C 10msec Tj = 150°C Single Pulse V 0.1 DS 1 10 100 1000 10000 90 % VDS , Drain-toSource Voltage (V)
Fig. 8 - Maximum Safe Operating Area
10 % VGS t t t t d(on) r d(off) f
Fig. 10b - Switching Time Waveforms
1 ) D = 0.50 thJC 0.1 (Z 0.20 e s n o 0.10 p s e 0.05 l R 0.02 SINGLE PULSE P DM rma 0.01 (THERMAL RESPONSE) 0.01 e t h 1 T t 2 Notes: 1. Duty factor D = t / t 1 2 2. Peak T = P x Z + T J DM thJC C 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, Rectangular Pulse Duration (sec) S22-0046, Rev. C, 24-Jan-2021
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