Datasheet HER101G (Taiwan Semiconductor)

HER101G – HER108G
Taiwan Semiconductor
1A, 50V - 1000V High Efficient Rectifier FEATURES KEY PARAMETERS
● AEC-Q101 qualified available
PARAMETER VALUE UNIT
● Glass passivated chip junction I ● High current capability, Low V F 1 A F ● High reliability VRRM 50 - 1000 V ● High surge current capability IFSM 30 A ● RoHS Compliant T ● J MAX 150 °C Halogen-free according to IEC 61249-2-21 Package DO-204AL (DO-41)
APPLICATIONS
Configuration Single die ● DC to DC converter ● Switching mode converters and inverters ● Freewheeling application
MECHANICAL DATA
● Case: DO-204AL (DO-41) ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Pure tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Polarity: Indicated by cathode band ● Weight: 0.330g (approximately)
DO-204AL (DO-41) ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
HER HER HER HER HER HER HER HER PARAMETER SYMBOL UNIT 101G 102G 103G 104G 105G 106G 107G 108G
HER HER HER HER HER HER HER HER Marking code on the device 101G 102G 103G 104G 105G 106G 107G 108G Repetitive peak reverse V voltage RRM 50 100 200 300 400 600 800 1000 V Reverse voltage, total rms V value R(RMS) 35 70 140 210 280 420 560 700 V Forward current IF 1 A Surge peak forward current, 8.3ms single half sine wave IFSM 30 A superimposed on rated load Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C 1 Version: L2104