Datasheet BTA206X-800ET (WeEn Semiconductors)
| Hersteller | WeEn Semiconductors |
| Beschreibung | 3Q Hi-Com Triac |
| Seiten / Seite | 12 / 1 — BTA206X-800ET. 3Q Hi-Com Triac. Rev.02- 28 August 2023. Product data … |
| Dateiformat / Größe | PDF / 592 Kb |
| Dokumentensprache | Englisch |
BTA206X-800ET. 3Q Hi-Com Triac. Rev.02- 28 August 2023. Product data sheet. 1. General description. 2. Features and benefits
Modelllinie für dieses Datenblatt
Textversion des Dokuments
BTA206X-800ET 3Q Hi-Com Triac Rev.02- 28 August 2023 Product data sheet 1. General description
Planar passivated high commutation three quadrant triac in a TO220F "full pack" plastic package. This "series ET" triac balances the requirements of commutation performance and gate sensitivity and is intended for interfacing with low power drivers including microcontrollers. It is used where "high junction operating temperature" capability (Tj = 150 °C) is required.
2. Features and benefits
• 3Q technology for improved noise immunity • Direct interfacing with low power drivers and microcontrollers • Good immunity to false turn-on by dV/dt • High commutation capability with sensitive gate • High junction operating temperature capability • High voltage capability • Isolated mounting base package • Planar passivated for voltage ruggedness and reliability • Sensitive gate for easy logic level triggering • Triggering in three quadrants only
3. Applications
• Applications subject to high temperature • Electronic thermostats (heating and cooling) • Motor controls for home appliances • Rectifier-fed DC inductive loads e.g. DC motors and solenoids
4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit
VDRM repetitive peak off-state - - 800 V voltage IT(RMS) RMS on-state current full sine wave; Th ≤ 114°C; - - 6 A Fig.1; Fig. 2; Fig. 3 ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C; tp =20 ms; - - 60 A state current Fig. 4; Fig. 5 full sine wave; Tj(init) = 25 °C; tp =16.7 ms - - 66 A Tj junction temperature - - 150 °C
Static characteristics
IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; - - 10 mA Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2+ G-; - - 10 mA Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G-; - - 10 mA Tj = 25 °C; Fig. 7 Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Isolation characteristics 11. Characteristics 12. Package outline 13. Legal information 14. Contents
Planar passivated high commutation three quadrant triac in a TO220F "full pack" plastic package. This "series ET" triac balances the requirements of commutation performance and gate sensitivity and is intended for interfacing with low power drivers including microcontrollers. It is used where "high junction operating temperature" capability (Tj = 150 °C) is required.
2. Features and benefits
• 3Q technology for improved noise immunity • Direct interfacing with low power drivers and microcontrollers • Good immunity to false turn-on by dV/dt • High commutation capability with sensitive gate • High junction operating temperature capability • High voltage capability • Isolated mounting base package • Planar passivated for voltage ruggedness and reliability • Sensitive gate for easy logic level triggering • Triggering in three quadrants only
3. Applications
• Applications subject to high temperature • Electronic thermostats (heating and cooling) • Motor controls for home appliances • Rectifier-fed DC inductive loads e.g. DC motors and solenoids
4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit
VDRM repetitive peak off-state - - 800 V voltage IT(RMS) RMS on-state current full sine wave; Th ≤ 114°C; - - 6 A Fig.1; Fig. 2; Fig. 3 ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C; tp =20 ms; - - 60 A state current Fig. 4; Fig. 5 full sine wave; Tj(init) = 25 °C; tp =16.7 ms - - 66 A Tj junction temperature - - 150 °C
Static characteristics
IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; - - 10 mA Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2+ G-; - - 10 mA Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G-; - - 10 mA Tj = 25 °C; Fig. 7 Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Isolation characteristics 11. Characteristics 12. Package outline 13. Legal information 14. Contents