Datasheet MTP33N10E (ON Semiconductor) - 3
| Hersteller | ON Semiconductor |
| Beschreibung | Power MOSFET 33 Amps, 100 Volts |
| Seiten / Seite | 8 / 3 — MTP33N10E. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Typ. … |
| Dateiformat / Größe | PDF / 269 Kb |
| Dokumentensprache | Englisch |
MTP33N10E. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Typ. Max. Unit. OFF CHARACTERISTICS. ON CHARACTERISTICS
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MTP33N10E ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Drain−Source Breakdown Voltage V(BR)DSS (VGS = 0 Vdc, ID = 250 μAdc) 100 − − Vdc Temperature Coefficient (Positive) − 118 − mV/°C Zero Gate Voltage Drain Current IDSS μAdc (VDS = 100 Vdc, VGS = 0 Vdc) − − 10 (VDS = 100 Vdc, VGS = 0 Vdc, TJ = − 25°C) − − 100 Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS − − 100 nAdc
ON CHARACTERISTICS
(Note 1) Gate Threshold Voltage VGS(th) (VDS = VGS, ID = 250 μAdc) 2.0 − 4.0 Vdc Temperature Coefficient (Negative) − 7.0 − mV/°C Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 16.5 Adc) RDS(on) − 0.04 0.06 Ohm Drain−Source On−Voltage (VGS = 10 Vdc) VDS(on) Vdc (ID = 33 Adc) − 1.6 2.4 (ID = 16.5 Adc, TJ = − 25°C) − − 2.1 Forward Transconductance (VDS = 8.0 Vdc, ID = 16.5 Adc) gFS 8.0 − − mhos
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss − 1830 2500 pF (VDS = 25 Vdc, VGS = 0 Vdc, Output Capacitance C f = 1.0 MHz) oss − 678 1200 Reverse Transfer Capacitance Crss − 559 1100
SWITCHING CHARACTERISTICS
(Note 2) Turn−On Delay Time td(on) − 18 40 ns (V Rise Time DD = 50 Vdc, ID = 33 Adc, tr − 164 330 VGS = 10 Vdc, Turn−Off Delay Time R t G = 9.1 Ω) d(off) − 48 100 Fall Time tf − 83 170 Gate Charge QT − 52 110 nC (See Figure 8) (V Q DS = 80 Vdc, ID = 33 Adc, 1 − 12 − VGS = 10 Vdc) Q2 − 32 − Q3 − 24 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (Note 1) (IS = 33 Adc, VGS = 0 Vdc) VSD − 1.0 2.0 Vdc (IS = 33 Adc, VGS = 0 Vdc, TJ = 125°C) − 0.98 − Reverse Recovery Time trr − 144 − ns (See Figure 14) (I t S = 33 Adc, VGS = 0 Vdc, a − 108 − dIS/dt = 100 A/μs) tb − 36 − Reverse Recovery Stored Charge QRR − 0.93 − μC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance LD nH (Measured from contact screw on tab to center of die) − 3.5 − (Measured from the drain lead 0.25″ from package to center of die) 4.5 Internal Source Inductance LS − 7.5 − nH (Measured from the source lead 0.25″ from package to source bond pad) 1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature.
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MTP33N10E ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Drain−Source Breakdown Voltage V(BR)DSS (VGS = 0 Vdc, ID = 250 μAdc) 100 − − Vdc Temperature Coefficient (Positive) − 118 − mV/°C Zero Gate Voltage Drain Current IDSS μAdc (VDS = 100 Vdc, VGS = 0 Vdc) − − 10 (VDS = 100 Vdc, VGS = 0 Vdc, TJ = − 25°C) − − 100 Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS − − 100 nAdc
ON CHARACTERISTICS
(Note 1) Gate Threshold Voltage VGS(th) (VDS = VGS, ID = 250 μAdc) 2.0 − 4.0 Vdc Temperature Coefficient (Negative) − 7.0 − mV/°C Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 16.5 Adc) RDS(on) − 0.04 0.06 Ohm Drain−Source On−Voltage (VGS = 10 Vdc) VDS(on) Vdc (ID = 33 Adc) − 1.6 2.4 (ID = 16.5 Adc, TJ = − 25°C) − − 2.1 Forward Transconductance (VDS = 8.0 Vdc, ID = 16.5 Adc) gFS 8.0 − − mhos
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss − 1830 2500 pF (VDS = 25 Vdc, VGS = 0 Vdc, Output Capacitance C f = 1.0 MHz) oss − 678 1200 Reverse Transfer Capacitance Crss − 559 1100
SWITCHING CHARACTERISTICS
(Note 2) Turn−On Delay Time td(on) − 18 40 ns (V Rise Time DD = 50 Vdc, ID = 33 Adc, tr − 164 330 VGS = 10 Vdc, Turn−Off Delay Time R t G = 9.1 Ω) d(off) − 48 100 Fall Time tf − 83 170 Gate Charge QT − 52 110 nC (See Figure 8) (V Q DS = 80 Vdc, ID = 33 Adc, 1 − 12 − VGS = 10 Vdc) Q2 − 32 − Q3 − 24 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (Note 1) (IS = 33 Adc, VGS = 0 Vdc) VSD − 1.0 2.0 Vdc (IS = 33 Adc, VGS = 0 Vdc, TJ = 125°C) − 0.98 − Reverse Recovery Time trr − 144 − ns (See Figure 14) (I t S = 33 Adc, VGS = 0 Vdc, a − 108 − dIS/dt = 100 A/μs) tb − 36 − Reverse Recovery Stored Charge QRR − 0.93 − μC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance LD nH (Measured from contact screw on tab to center of die) − 3.5 − (Measured from the drain lead 0.25″ from package to center of die) 4.5 Internal Source Inductance LS − 7.5 − nH (Measured from the source lead 0.25″ from package to source bond pad) 1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature.
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