Datasheet MMBT4403 (ON Semiconductor) - 3

2 N 4403 / MMBT4403 — PNP Ge Absolute Maximum Ratings
(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Value Unit
VCEO Collector-Emitter Voltage -40 V VCBO Collector-Base Voltage -40 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current - Continuous -600 mA TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
neral-Purpose Amplifier Notes:
1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low- duty cycle operations.
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Max. Symbol Parameter Unit 2N4403
(3)
MMBT4403
(4) Total Device Dissipation 625 350 mW PD Derate Above 25°C 5.0 2.8 mW/°C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 357 °C/W
Notes:
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. 4. Device mounted on FR-4 PCB 1.6 inch x 1.6 inch x 0.06 inch. www.onsemi.com 2