Datasheet MMBT4401 (ON Semiconductor) - 6
Hersteller | ON Semiconductor |
Beschreibung | NPN General Purpose Amplifier |
Seiten / Seite | 10 / 6 — 2N4401 / MMBT4401. Typical Performance Characteristics. I c. I = I =. V = … |
Dateiformat / Größe | PDF / 675 Kb |
Dokumentensprache | Englisch |
2N4401 / MMBT4401. Typical Performance Characteristics. I c. I = I =. V = 25 V. — NPN General-Purpose Amplifier. (nS. off. t f. t on. t d
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2N4401 / MMBT4401 Typical Performance Characteristics
(Continued) 400 400
I c I I = I = c B1 B2 I = I = 10 B1 B2 10
320 320
V = 25 V cc V = 25 V cc ) )
240 240
— NPN General-Purpose Amplifier (nS (nS E E M
160
M TI
160
t TI s t t off r
80 80
t f t on t d
0 0 10 100 1000 10 100 1000
I - COLLECTOR CURRENT (mA) C I - COLLECTOR CURRENT (mA) C Figure 9. Turn-On and Turn-Off Times vs. Figure 10. Switching Times vs.Collector Current Collector Current A m
8
0 V = 10 V
1
1 CE = o ) C T = 25 C A I T SOT-223 A
6 0.75
ON (W S TI TO-92 E A U hoe P L SI A V
0.5 4
R DIS SOT-23 TO E E h re W V O TI
0.25 2
- P LA E h fe P D . R R h
0
A ie
0 25 50 75 100 125 150 0
H o
0 10 20 30 40 50 60
C TEMPERATURE ( C) I - COLLECTOR CURRENT (mA) C Figure 11. Power Dissipation vs. Figure 12. Common Emitter Characteristics Ambient Temperature o V 5 C
2.4
0
1.3
2 V = 10 V 1 I = 10 mA = CE = C A I = 10 mA
1.25
CE T = 25 C o h fe T C hre
2
A T hie V T
1.2
A A
1.15
ES hfe
1.6
ES U h LU
1.1
ie L A A
1.05
V h
1.2
oe V
1
TO TO E V
0.95
h
0.8
IVE re TI T A
0.9
A L E
0.4
EL
0.85
. R . R hoe R
0.8
R A A
0
H
0.75
C
0 20 40 60 80 100
CH
0 5 10 15 20 25 30 35
T - AMBIENT TEMPERATURE ( oC) V CE - COLLECTOR VOLTAGE (V) A Figure 13. Common Emitter Characteristics Figure 14. Common Emitter Characteristics
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