Datasheet CPH3362 (ON Semiconductor) - 2

HerstellerON Semiconductor
BeschreibungPower MOSFET 100V, 1.7Ω, 0.7A, Single P-Channel
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CPH3362. Continued from preceding page. Value. Parameter Symbol Conditions Unit

CPH3362 Continued from preceding page Value Parameter Symbol Conditions Unit

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CPH3362
Continued from preceding page.
Value
Parameter Symbol Conditions Unit
min Typ max Turn-ON Delay Time td(on) 3.9 ns Rise Time tr 3.4 ns Turn-OFF Delay Time td(off) 28 ns Fall Time tf 12 ns Total Gate Charge Qg 3.7 nC Gate to Source Charge Qgs 0.37 nC Gate to Drain “Miller” Charge Qgd 0.86 nC Forward Diode Voltage VSD See specified Test Circuit VDS=50V, VGS=10V, ID=0.7A 0.83 IS=0.7A, VGS=0V 1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions. Ordering & Package Information Packing Type:TL Device Package Shipping note CPH3362-TL-W CPH3, SC-59
SOT-23, TO-236 3,000
pcs. / reel Pb-Free
and
Halogen Free Marking TL Electrical Connection Switching Time Test Circuit No.A2321-2/5