Datasheet BC639 (ON Semiconductor) - 4

BC637, BC639, BC639−16
1000 500 500 V SOA = 1S CE = 2 V (mA) 200 PD TA 25°C 200 100 GAIN 50 PD TC 25°C 100 OR CURRENT 20 10 , DC CURRENT FE 50 , COLLECT h 5 I C BC635 PD TA 25°C 2 BC637 PD TC 25°C BC639 1 20 1 2 3 4 5 7 10 20 30 40 50 70 100 1 3 5 10 30 50 100 300 500 1000 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
Figure 1. Active Region Safe Operating Area Figure 2. DC Current Gain
500 1 (MHz) 300 0.8 VBE(sat) @ IC/IB = 10 TS) V 0.6 BE(on) @ VCE = 2 V VCE = 2 V 100 TAGE (VOL 0.4 , VOL V 50 0.2 VCE(sat) @ IC/IB = 10 20 0 f, CURRENT-GAIN — BANDWIDTH PRODUCT T 1 10 100 1000 1 10 100 1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 3. Current−Gain — Bandwidth Product Figure 4. “Saturation” and “On” Voltages
-0.2 C) ° -1.0 VCE = 2 VOLTS TURE COEFFICIENTS (mV/ DT = 0°C to +100°C -1.6 qV for VBE , TEMPERA Vθ -2.2 1 3 5 10 30 50 100 300 500 1000 IC, COLLECTOR CURRENT (mA)
Figure 5. Temperature Coefficients http://onsemi.com 3