Datasheet BC637, BC639, BC639-16 (ON Semiconductor) - 2

link to page 3 BC637, BC639, BC639-16 High Current Transistors
NPN Silicon Features
• These are Pb−Free Devices*
http://onsemi.com
COLLECTOR 2
MAXIMUM RATINGS
3
Rating Symbol Value Unit
BASE Collector - Emitter Voltage VCEO Vdc BC637 60 BC639 80 1 EMITTER Collector - Base Voltage VCBO Vdc BC637 60 BC639 80 Emitter - Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 1.0 Adc
TO−92
Total Device Dissipation @ TA = 25°C PD 625 mW
CASE 29
Derate above 25°C 5.0 mW/°C
STYLE 14
Total Device Dissipation @ TC = 25°C PD 800 mW Derate above 25°C 12 mW/°C 1 1 2 2 3 3 Operating and Storage Junction TJ, Tstg −55 to +150 °C Temperature Range STRAIGHT LEAD BENT LEAD BULK PACK TAPE & REEL
THERMAL CHARACTERISTICS
AMMO PACK
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W
MARKING DIAGRAMS
Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. BC BC63 63x 9−16 AYWW G AYWW G G G x = 7 or 9 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) *For additional information on our Pb−Free strategy and soldering details, please
ORDERING INFORMATION
download the ON Semiconductor Soldering and Mounting Techniques See detailed ordering and shipping information in the package Reference Manual, SOLDERRM/D. dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
February, 2011 − Rev. 1 BC637/D