Datasheet JCS10N60T (JiLin Sino-Microelectronics) - 5

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JCS10N60T 特征曲线
ELECTRICAL CHARACTERISTICS (curves) On-Region Characteristics Transfer Characteristics
VGS Top 15V 10V 9V 8V 10 7V 10 6.5V 6V ] ] 5.5V [A Bottom 5V [A I I D D 150℃ 25℃ 1 Notes: Notes: 1 1. 250μs pulse test 1.250μs pulse test 2. T =25℃ C 2.V =40V DS 0.1 1 10 2 4 6 8 10 V [V] V [V] DS GS
On-Resistance Variation vs. Body Diode Forward Voltage Variation Drain Current and Gate Voltage vs. Source Current and Temperature
1.00 0.95 10 0.90 ] V =10V Ω GS [ 0.85 on ) [A] ( 0.80 I DR 25 ℃ DS 150 ℃ R 1 0.75 V =20V 0.70 GS Notes: 1. 250μs pulse test 0.65 Note :T=25 ℃ j 2. V =0V GS 0.60 0.1 0 2 4 6 8 10 12 14 16 18 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 I [A] V [V] D SD
Capacitance Characteristics Gate Charge Characteristics
3x103 12
C =C +C (C =shorted) iss gs gd ds
V =480V DS
C =C +C oss ds gd
10 V =300V
C =C
DS
rss gd
V] V =120V 2x103 8 DS e [pF] tage[ tanc 6 ci ce Vol our 1x103 S 4 Capa e Gat 2 V GS 0 0 10-1 100 101 0 10 20 30 40 V Drain-Source Voltage [V] DS Q Toltal Gate Charge [nC] g 版本：201112D 5/10