Datasheet PE4259 (pSemi) - 2
| Hersteller | pSemi |
| Beschreibung | SPDT High Power UltraCMOS 10 MHz–3.0 GHz RF Switch |
| Seiten / Seite | 10 / 2 — PE4259. Table 1. Electrical Specifications @ +25 °C, VDD = 3V. Parameter … |
| Dateiformat / Größe | PDF / 575 Kb |
| Dokumentensprache | Englisch |
PE4259. Table 1. Electrical Specifications @ +25 °C, VDD = 3V. Parameter Condition. Minimum. Typical. Maximum. Unit. Page 2 of 10
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PE4259
Product Specification
Table 1. Electrical Specifications @ +25 °C, VDD = 3V
(ZS = ZL = 50Ω )
Parameter Condition Minimum Typical Maximum Unit
Operation frequency1 10 3000 MHz 1000 MHz 0.35 0.45 dB Insertion loss3 2000 MHz 0.50 0.60 dB 1000 MHz 29 30 dB Isolation 2000 MHz 19 20 dB 1000 MHz 21 22 dB Return loss3 2000 MHz 24 27 dB ‘ON’ switching time 50% CTRL to 0.1 dB of final value, 1 GHz 1.50 us ‘OFF’ switching time 50% CTRL to 25 dB isolation, 1 GHz 1.50 us Video feedthrough2 15 mVpp 1000 MHz @ 2.3–3.3V 31.5 33.5 dBm 1000 MHz @ 1.8–2.3V 29.5 30.5 dBm Input 1dB compression point 2500 MHz @ 2.3–3.3V 28.5 30.5 dBm 2500 MHz @ 1.8–2.3V 28 29 dBm Input IP3 1000 MHz, 20 dBm input power 55 dBm Notes: 1. Device linearity will begin to degrade below 10 MHz. 2. The DC transient at the output of any port of the switch when the control voltage is switched from Low to High or High to Low in a 50Ω test set-up, measured with 1ns risetime pulses and 500 MHz bandwidth. 3. A tuning capacitor must be added to the application board to optimize the insertion loss and return loss performance. See Figure 6 for details. ©2005-2023 pSemi Corporation All rights reserved. Document No. DOC-03694-5 │ UltraCMOS® RFIC Solutions
Page 2 of 10
Product Specification
Table 1. Electrical Specifications @ +25 °C, VDD = 3V
(ZS = ZL = 50Ω )
Parameter Condition Minimum Typical Maximum Unit
Operation frequency1 10 3000 MHz 1000 MHz 0.35 0.45 dB Insertion loss3 2000 MHz 0.50 0.60 dB 1000 MHz 29 30 dB Isolation 2000 MHz 19 20 dB 1000 MHz 21 22 dB Return loss3 2000 MHz 24 27 dB ‘ON’ switching time 50% CTRL to 0.1 dB of final value, 1 GHz 1.50 us ‘OFF’ switching time 50% CTRL to 25 dB isolation, 1 GHz 1.50 us Video feedthrough2 15 mVpp 1000 MHz @ 2.3–3.3V 31.5 33.5 dBm 1000 MHz @ 1.8–2.3V 29.5 30.5 dBm Input 1dB compression point 2500 MHz @ 2.3–3.3V 28.5 30.5 dBm 2500 MHz @ 1.8–2.3V 28 29 dBm Input IP3 1000 MHz, 20 dBm input power 55 dBm Notes: 1. Device linearity will begin to degrade below 10 MHz. 2. The DC transient at the output of any port of the switch when the control voltage is switched from Low to High or High to Low in a 50Ω test set-up, measured with 1ns risetime pulses and 500 MHz bandwidth. 3. A tuning capacitor must be added to the application board to optimize the insertion loss and return loss performance. See Figure 6 for details. ©2005-2023 pSemi Corporation All rights reserved. Document No. DOC-03694-5 │ UltraCMOS® RFIC Solutions
Page 2 of 10