Datasheet 2SD1759 (Rohm) - 2

2SD1759 / 2SD1861 Tr ansistors z
Electrical characteristics curves
1.0 2000 Ta=25°C µA Ta=25°C Ta=25°C 100 90µA 80µA VCE= 3V (A) 1000 50000 C 0.8 70µA (mA) 500 C FE 60µA 200 20000 VCE=3V 0.6 50µA 100 40µA 50 10000 0.4 30µA 20 5000 1V 20µA 10 5 DC CURRENT GAIN : h COLLECTOR CURRENT : I 0.2 10µA COLLECTOR CURRENT : I 2000 2 IB= 0µA 0 1 0 1 2 3 4 5 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 1 2 5 10 20 50 100 200 500 1000 2000 5000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (mA) Fig.1 Ground emitter output characteristics Fig.2 Ground emitter propagation characteristics Fig.3 DC current gain vs. collector current (V) 50 50 Ta=25°C (pF) f=1MHz f=1MHz CE(sat) IC/IB=1000 I I 5.0 C=0A (pF) C=0A Ta=25°C Ta=25°C 20 20 2.0 10 10 1.0 5 5 0.5 2 2 0.2 EMITTER INPUT CAPACITANCE :Cib 1 1 1 2 5 10 20 50 100 200 500 1000 2000 0.1 0.2 0.5 1 2 5 10 20 50 100 0.1 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR SATURATION VOLTAGE : V COLLECTOR OUTPUT CAPACITANCE :Cob COLLECTOR CURRENT : IC (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.4 Collector-emitter saturation voltage Fig.5 Colletor output capacitance Fig.6 Emitter input capacitance vs. collector current vs. collector-base voltage vs. emitter-base voltage Rev.A 2/2 Document Outline Power transistor (40V, 2A) 2SD1759 / 2SD1861