Datasheet FGD4536 (ON Semiconductor) - 3

HerstellerON Semiconductor
Beschreibung360 V PDP Trench IGBT
Seiten / Seite9 / 3 — FGD4536. Package Marking and Ordering Information. Device Marking. …
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DokumentenspracheEnglisch

FGD4536. Package Marking and Ordering Information. Device Marking. Device. Package. Reel Size. Tape Width. Quantity

FGD4536 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity

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FGD4536 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity
FGD4536 FGD4536TM TO252(D-PAK) 380

mm 16

mm -

FGD4536 FGD4536TM-F065 TO252(D-PAK) 380

mm 16

mm -
360 V PDP Trench IGBT Electrical Characteristics of the IGBT
TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics
BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250

A 360 - - V BVCES Temperature Coefficient of Breakdown  V T GE = 0V, IC = 250

A - 0.4 - V/oC J Voltage ICES Collector Cut-Off Current VCE = VCES, VGE = 0

V - - 100 A IGES G-E Leakage Current VGE = VGES, VCE = 0

V - - ±400 nA
On Characteristics
VGE(th) G-E Threshold Voltage IC = 250

A, VCE = VGE 2.4 3.3 4.0 V IC = 20

A, VGE = 15

V - 1.19 - V I V C = 30

A, VGE = 15

V - 1.33 - V CE(sat) Collector to Emitter Saturation Voltage IC = 50

A, VGE = 15

V, TC = 25oC - 1.59 1.8 V IC = 50

A, VGE = 15

V, TC = 125oC - 1.66 - V
Dynamic Characteristics
Cies Input Capacitance - 1295 - pF VCE = 30

V, VGE = 0

V, Coes Output Capacitance - 56 - pF f = 1

MHz Cres Reverse Transfer Capacitance - 43 - pF
Switching Characteristics
td(on) Turn-On Delay Time - 5 - ns VCC = 200

V, IC = 20

A, tr Rise Time - 20 - ns RG = 5

, VGE = 15

V, td(off) Turn-Off Delay Time Resistive Load, T - 41 - ns C = 25oC tf Fall Time - 182 - ns td(on) Turn-On Delay Time - 5 - ns VCC = 200

V, IC = 20

A, tr Rise Time - 21 - ns RG = 5

, VGE = 15

V, td(off) Turn-Off Delay Time Resistive Load, T - 43 - ns C = 125oC tf Fall Time - 249 - ns Qg Total Gate Charge - 47 - nC VCE = 200

V, IC = 20

A, Qge Gate to Emitter Charge V - 5.4 - nC GE = 15

V Qgc Gate to Collector Charge - 15 - nC
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Document Outline FGD4536 360 V PDP Trench IGBT 360 V ± 30 V 220 A 125 W 50 W -55 to +150 oC -55 to +150 oC - 1.0 oC/W - 62.5 oC/W FGD4536 FGD4536TM TO252(D-PAK) 380 mm 16 mm - FGD4536 FGD4536TM_F065 TO252(D-PAK) 380 mm 16 mm - - - V - 100 mA - ±400 nA 3.3 4.0 V 1.19 - V 1295 - pF 56 - pF 43 - pF 5 - ns 20 - ns 41 - ns 182 - ns 5 - ns 21 - ns 43 - ns 249 - ns 47 - nC 5.4 - nC 15 - nC