Datasheet TDA7850 (STMicroelectronics) - 8

HerstellerSTMicroelectronics
Beschreibung4 x 50 W MOSFET Quad Bridge Power Amplifier
Seiten / Seite18 / 8 — Electrical specifications. TDA7850. 3.3 Electrical. characteristics. …
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DokumentenspracheEnglisch

Electrical specifications. TDA7850. 3.3 Electrical. characteristics. Table 4. Electrical characteristics. Symbol. Parameter

Electrical specifications TDA7850 3.3 Electrical characteristics Table 4 Electrical characteristics Symbol Parameter

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Electrical specifications TDA7850 3.3 Electrical characteristics Table 4. Electrical characteristics
(Refer to the test and application diagram, VS = 14.4 V; RL = 4 ; Rg = 600 ; f = 1 kHz; Tamb = 25 °C; unless otherwise specified).
Symbol Parameter Test condition Min. Typ. Max. Unit
Iq1 Quiescent current RL =  100 180 280 mA VOS Output offset voltage Play mode / Mute mode ±50 mV During mute ON/OFF output -10 +10 mV offset voltage ITU R-ARM weighted dVOS see Figure 20 During Standby ON/OFF output -10 +10 mV offset voltage Gv Voltage gain 25 26 27 dB dGv Channel gain unbalance ±1 dB VS = 13.2 V; THD = 10 % 23 25 VS = 13.2 V; THD = 1 % 16 19 W P V 28 30 o Output power S = 14.4 V; THD = 10 % VS = 14.4 V; THD = 1 % 20 23 VS = 14.4 V; THD = 10 %, 2 50 55 W V 50 P S = 14.4 V; RL = 4 o max. Max. output power(1) W VS = 14.4 V; RL = 2 85 P 0.006 0.02 THD Distortion o = 4W % Po = 15W; RL = 2 0.015 0.03 "A" Weighted 35 50 e  No Output noise V Bw = 20 Hz to 20 kHz 50 70 SVR Supply voltage rejection f = 100 Hz; Vr = 1Vrms 50 75 dB fch High cut-off frequency PO = 0.5 W 100 300 KHz Ri Input impedance 80 100 120 K f = 1 kHz P 60 70 - C O = 4 W T Cross talk dB f = 10 kHz PO = 4 W 60 - VST-BY = 1.5 V 20 I  SB Standby current consumption A VST-BY = 0 V 10 Ipin5 ST-BY pin current VST-BY = 1.5 V to 3.5 V ±1 A VSB out Standby out threshold voltage (Amp: ON) 2.75 V VSB in Standby in threshold voltage (Amp: OFF) 1.5 V AM Mute attenuation POref = 4 W 80 90 dB VM out Mute out threshold voltage (Amp: Play) 3.5 V VM in Mute in threshold voltage (Amp: Mute) 1.5 V 8/18 Document Outline Table 1. Device summary 1 Block diagram and application circuit 1.1 Block diagram Figure 1. Block diagram 1.2 Standard test and application circuit Figure 2. Standard test and application circuit 2 Pin description Figure 3. Pin connection (top view) 3 Electrical specifications 3.1 Absolute maximum ratings Table 2. Absolute maximum ratings 3.2 Thermal data Table 3. Thermal data 3.3 Electrical characteristics Table 4. Electrical characteristics Figure 4. Components and top copper layer of the Figure 2. Figure 5. Bottom copper layer Figure 2. 3.4 Electrical characteristic curves Figure 6. Quiescent current vs. supply voltage Figure 7. Output power vs. supply voltage (RL = 4W) Figure 8. Output power vs. supply voltage (RL = 2W) Figure 9. Distortion vs. output power (RL = 4W) Figure 10. Distortion vs. output power (RL = 2W) Figure 11. Distortion vs. frequency (RL = 4W) Figure 12. Distortion vs. frequency (RL = 2W) Figure 13. Crosstalk vs. frequency Figure 14. Supply voltage rejection vs. frequency Figure 15. Output attenuation vs. supply voltage Figure 16. Power dissipation and efficiency vs. output power (RL = 4W, SINE) Figure 17. Power dissipation and efficiency vs. output power (RL = 2W, SINE) Figure 18. Power dissipation vs. output power (RL = 4W, audio program simulation) Figure 19. Power dissipation vs. output power (RL = 2W, audio program simulation) Figure 20. ITU R-ARM frequency response, weighting filter for transient pop 4 Application hints 4.1 SVR 4.2 Input stage 4.3 Standby and muting 4.4 DC offset detector 4.5 Heatsink definition 5 Package information Figure 21. Flexiwatt25 (vertical) mechanical data and package dimensions Figure 22. Flexiwatt25 (horizontal) mechanical data and package dimensions 6 Revision history Table 5. Document revision history