Datasheet IRFF330, JANTX2N6800, JANTXV2N6800 (Infineon)
| Hersteller | Infineon |
| Beschreibung | 400V N-Channel HEXFET Transistors |
| Seiten / Seite | 7 / 1 — PD-90432E. IRFF330. JANTX2N6800. JANTXV2N6800. REPETITIVE AVALANCHE AND … |
| Dateiformat / Größe | PDF / 1.2 Mb |
| Dokumentensprache | Englisch |
PD-90432E. IRFF330. JANTX2N6800. JANTXV2N6800. REPETITIVE AVALANCHE AND dv/dt RATED. 400V, N-CHANNEL. HEXFET® TRANSISTORS
Modelllinie für dieses Datenblatt
Textversion des Dokuments
PD-90432E IRFF330 JANTX2N6800 JANTXV2N6800 REPETITIVE AVALANCHE AND dv/dt RATED 400V, N-CHANNEL HEXFET® TRANSISTORS REF: MIL-PRF-19500/557 THRU-HOLE TO-205AF (TO-39) Product Summary Part Number BVDSS RDS(on) ID
IRFF330 400V 1.0 3.0A
TO-39 Description Features
Repetitive Avalanche Ratings The HEXFET® technology is the key to International Dynamic dv/dt Rating Rectifier’s HiRel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest Hermetically Sealed “State of the Art” design achieves: very low on state Simple Drive Requirements resistance combined with high trans conductance. ESD Rating: Class 1C per MIL-STD-750, Method 1020 The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
Absolute Maximum Ratings Symbol Parameter Value Units
ID1 @ VGS = 10V, TC = 25°C Continuous Drain Current 3.0 I A D2 @ VGS = 10V, TC = 100°C Continuous Drain Current 2.0 IDM @ TC = 25°C Pulsed Drain Current 12 PD @ TC = 25°C Maximum Power Dissipation 25 W Linear Derating Factor 0.20 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 191 mJ IAR Avalanche Current 3.0 A EAR Repetitive Avalanche Energy 2.5 mJ dv/dt Peak Diode Recovery dv/dt 4.0 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Lead Temperature 300 (0.063 in. /1.6 mm from case for 10s) Weight 0.98 (Typical) g For Footnotes, refer to the page 2. 1 International Rectifier HiRel Products, Inc. 2018-11-20
IRFF330 400V 1.0 3.0A
TO-39 Description Features
Repetitive Avalanche Ratings The HEXFET® technology is the key to International Dynamic dv/dt Rating Rectifier’s HiRel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest Hermetically Sealed “State of the Art” design achieves: very low on state Simple Drive Requirements resistance combined with high trans conductance. ESD Rating: Class 1C per MIL-STD-750, Method 1020 The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
Absolute Maximum Ratings Symbol Parameter Value Units
ID1 @ VGS = 10V, TC = 25°C Continuous Drain Current 3.0 I A D2 @ VGS = 10V, TC = 100°C Continuous Drain Current 2.0 IDM @ TC = 25°C Pulsed Drain Current 12 PD @ TC = 25°C Maximum Power Dissipation 25 W Linear Derating Factor 0.20 W/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 191 mJ IAR Avalanche Current 3.0 A EAR Repetitive Avalanche Energy 2.5 mJ dv/dt Peak Diode Recovery dv/dt 4.0 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Lead Temperature 300 (0.063 in. /1.6 mm from case for 10s) Weight 0.98 (Typical) g For Footnotes, refer to the page 2. 1 International Rectifier HiRel Products, Inc. 2018-11-20