Datasheet 2N6545 (Inchange Semiconductor)

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6545 DESCRIPTION
·Excel ent Safe Operating Area ·High Voltage,High Speed ·Low Saturation Voltage
APPLICATIONS
·Designed for high-voltage ,high-speed, power switching in inductive circuits where fal time is critical. They are partic- ularly suited for 115 and 220 volt line operated switch-mode applications such as: ·Switching regulators ·PWM inverters and motor controls ·Solenoid and relay drivers ·Deflection circuits
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃
) SYMBOL PARAMETER VALUE UNIT
VCBO Col ector-Base Voltage 850 V VCEO Col ector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Col ector Current-Continuous 8 A ICM Col ector Current-Peak 16 A PC Col ector Power Dissipation@TC=25℃ 125 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃
THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.4 ℃/W
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Document Outline isc Silicon NPN Power Transistor DESCRIPTION APPLICATIONS ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS