SB3H90, SB3H100 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETERTEST CONDITIONSSYMBOLSB3H90SB3H100UNIT Maximum instantaneous TJ = 25 °C 0.80 I V V forward voltage F = 3.0 A F (1) TJ = 125 °C 0.65 Maximum reverse current TJ = 25 °C 20 μA I at rated V R (2) R TJ = 125 °C 4.0 mA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETERSYMBOLSB3H90SB3H100UNIT RJA (1) 50 Maximum thermal resistance °C/W RJL (1) 20 Note (1) PCB mounted with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas ORDERING INFORMATION (Example) PREFERRED P/NUNIT WEIGHT (g)PREFERRED PACKAGE CODEBASE QUANTITYDELIVERY MODE SB3H100-E3/54 1.09 54 1400 13" diameter paper tape and reel SB3H100-E3/73 1.09 73 1000 Ammo pack packaging RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 4.0 100 T = T Max. Resistive or Inductive Load J J 8.3 ms Single Half Sine-Wave 0.375" (9.5 mm) Lead Length 80 3.0 ent (A) ent (A) 60 d Curr ge Curr 2.0 ur S d 40 1.0 verage Forwar 20 A Peak Forwar 0 10 0 25 50 75 100 125 150 175 1 10 100 Lead Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Revision: 13-Aug-13 2 Document Number: 88720 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000