Datasheet AOP609 (Alpha & Omega) - 2

AOD609 N Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 40 V VDS=40V, VGS=0V 1 I m DSS Zero Gate Voltage Drain Current A TJ=55°C 5 I Gate-Body leakage current V GSS DS=0V, VGS= ±20V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=250mA 1.7 2.5 3 V ID(ON) On state drain current VGS=10V, VDS=5V 30 A VGS=10V, ID=12A 24 30 RDS(ON) Static Drain-Source On-Resistance TJ=125°C 37 46 mW VGS=4.5V, ID=8A 31 40 g V FS Forward Transconductance DS=5V, ID=12A 25 S V I SD Diode Forward Voltage S=1A,VGS=0V 0.76 1 V IS Maximum Body-Diode Continuous Current H 12 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 516 650 pF C Output Capacitance V oss GS=0V, VDS=20V, f=1MHz 82 pF Crss Reverse Transfer Capacitance 43 pF R Gate resistance V g GS=0V, VDS=0V, f=1MHz 4.6 6.9 W
SWITCHING PARAMETERS
Qg (10V) Total Gate Charge 8.3 10.8 nC VGS=10V, VDS=20V, Qgs Gate Source Charge 2.3 nC ID=12A Qgd Gate Drain Charge 1.6 nC tD(on) Turn-On DelayTime 6.4 ns tr Turn-On Rise Time V 3.6 ns GS=10V, VDS=20V, RL=1.4W, t Turn-Off DelayTime R D(off) GEN=3W 16.2 ns tf Turn-Off Fall Time 6.6 ns trr Body Diode Reverse Recovery Time IF=12A, dI/dt=100A/ms 18 24 ns Qrr Body Diode Reverse Recovery Charge IF=12A, dI/dt=100A/ms 10 nC A: The value of Rθ is measured with the device in a still air environment with T =25°C. The power dissipation P and current rating I are JA A DSM DSM based on T =150°C, using the steady state junction-to-ambient thermal resistance. J(MAX) B. The power dissipation P is based on T =175°C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T =175°C. J(MAX) D. The Rθ is the sum of the thermal impedence from junction to case R and case to ambient. JA θJC E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =175°C. The SOA curve provides a single pulse rating. J(MAX) G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T =25°C. A H. The maximum current rating is limited by bond-wires. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev5.0: November 2018 www.aosmd.com Page 2 of 9