Preliminary Datasheet IRL3502 (International Rectifier) - 3
| Hersteller | International Rectifier |
| Beschreibung | HEXFET Power MOSFET |
| Seiten / Seite | 8 / 3 — Fig 1. Fig 2. Fig 3. Fig 4 |
| Dateiformat / Größe | PDF / 84 Kb |
| Dokumentensprache | Englisch |
Fig 1. Fig 2. Fig 3. Fig 4
Modelllinie für dieses Datenblatt
Textversion des Dokuments
IRL3502 1000 1000 VGS VGS TOP 7.00V TOP 7.00V 5.00V 5.00V 4.50V 4.50V 3.50V 3.50V 3.00V 3.00V 2.70V 2.70V 2.50V 2.50V BOTTOM 2.25V BOTTOM 2.25V 100 100 2.25V 2.25V I , Drain-to-Source Current (A) D I , Drain-to-Source Current (A) D 20µs PULSE WIDTH 20µs PULSE WIDTH T = 25 J °C T = 150 J °C 10 10 0.1 1 10 100 0.1 1 10 100 V , Drain-to-Source Voltage (V) DS V , Drain-to-Source Voltage (V) DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics 1000 2.0 ID = 110A T = 25 C ° J 1.5 T = 150 C ° J 100 1.0 (Normalized) 0.5 I , Drain-to-Source Current (A) D V = 15V DS 20µs PULSE WIDTH DS(on) V = GS 4.5V 10 R , Drain-to-Source On Resistance 0.0 2 3 4 5 6 -60 -40 -20 0 20 40 60 80 100 120 140 160 V , Gate-to-Source Voltage (V) ° GS T , Junction Temperature( C) J
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance Vs. Temperature
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics 1000 2.0 ID = 110A T = 25 C ° J 1.5 T = 150 C ° J 100 1.0 (Normalized) 0.5 I , Drain-to-Source Current (A) D V = 15V DS 20µs PULSE WIDTH DS(on) V = GS 4.5V 10 R , Drain-to-Source On Resistance 0.0 2 3 4 5 6 -60 -40 -20 0 20 40 60 80 100 120 140 160 V , Gate-to-Source Voltage (V) ° GS T , Junction Temperature( C) J
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance Vs. Temperature