Datasheet 2SK1056, 2SK1057, 2SK1058 (Renesas) - 5

HerstellerRenesas
BeschreibungSilicon N Channel MOSFET
Seiten / Seite8 / 5 — 2SK1056, 2SK1057, 2SK1058 Main Characteristics. Power vs. Temperature …
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2SK1056, 2SK1057, 2SK1058 Main Characteristics. Power vs. Temperature Derating Maximum Safe Operation Area

2SK1056, 2SK1057, 2SK1058 Main Characteristics Power vs Temperature Derating Maximum Safe Operation Area

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2SK1056, 2SK1057, 2SK1058 Main Characteristics
Power vs. Temperature Derating Maximum Safe Operation Area
20 Ta = 25°C io n (T C = 25 °C ) 0.5
2SK1056 0 50 100 0.2
5 150 10 20 50 2SK1057
2SK1058 100 200 500 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 10 1.0 7 6 6
5 4 Pch = 4 3 2 100 W –2
5°C
25
75 VDS = 10 V C= 0.8 T TC = 25°C VGS = 10 V
9
8 8 Drain Current ID (A) Drain Current ID (A) t
ra 50 pe
O 100 ID max (Continuous)
P PW
5
PW W = = 1
10 0 m
=
0 s
1
m 1 sh
1
2
1 ot
sh
sh
ot
ot
1.0 C Drain Current ID (A) 10 D Channel Dissipation Pch (W) 150 0.6 0.4 0.2 2
1
0
10 20 30 40 0.4 0.8 1.2 1.6 2.0 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation
Voltage vs. Drain Current Drain to Source Voltage vs.
Gate to Source Voltage 10
5 0 50 VGD = 0 25 °C 75 °C TC 25 =– °C 2
1.0
0.5 0.2
0.1
0.1 0.2 0.5 1.0 2 Drain Current ID (A) Rev.2.00 Sep 07, 2005 page 3 of 5 5 10 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage
VDS (on) (V) 0 10 TC = 25°C 8 6
5A 4 2 0 2A
ID = 1 A
2 4 6 8 Gate to Source Voltage VGS (V) 10